X-On Electronics has gained recognition as a prominent supplier of BUK752R3-40C MOSFET across the USA, India, Europe, Australia, and various other global locations. BUK752R3-40C MOSFET are a product manufactured by NXP. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BUK752R3-40C NXP

BUK752R3-40C electronic component of NXP
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See Product Specifications
Part No.BUK752R3-40C
Manufacturer: NXP
Category: MOSFET
Description: Trans MOSFET N-CH 40V 276A Automotive 3-Pin(3+Tab) TO-220AB
Datasheet: BUK752R3-40C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

11: USD 3.2577 ea
Line Total: USD 35.83

Availability - 0
MOQ: 11  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Channel Mode
Gate-Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the BUK752R3-40C from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK752R3-40C and other electronic components in the MOSFET category and beyond.

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BUK752R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive Avalanche robust Suitable for thermally demanding environment up to 175C rating 1.3 Applications 12V Motor, lamp and solenoid loads High performance Pulse Width Modulation applications High performance automotive power systems 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V =10 V T =25C 1 -- 100A D GS mb see Figure 1 see Figure 3 2 P total power dissipation T =25C see Figure 2 -- 333W tot mb Dynamic characteristics Q gate-drain charge V =10 V I =25A -67 - nC GD GS D V =32 V see Figure 15 DS Static characteristics R drain-source on-state V =10 V I =25A - 1.96 2.3 m DSon GS D resistance T =25C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =100 A V 40 V -- 1.2 J DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T = 25 C unclamped j(init) 1 Refer to document 9397 750 12572 for further information. 2 Continuous current is limited by package.NXP Semiconductors BUK752R3-40C N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78A (3-lead TO-220AB SC-46 SFM3) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK752R3-40C 3-lead plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78A TO-220AB TO-220AB SC-46 SFM3 BUK752R3-40C 3 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 26 January 2009 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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