BUK761R8-30C,118 NXP

BUK761R8-30C N-channel TrenchMOS standard level FET Rev. 02 20 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features 175 C rated Q101 compliant Standard level compatible TrenchMOS technology 1.3 Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit 1 2 I drain current V =10V T =25 C - - 100 A D GS mb see Figure 1 and 4 P total power dissipation T =25 C see Figure 2 - - 333 W tot mb Static characteristics R drain-source on-state V =10V I =25A -1.5 1.8 m DSon GS D resistance T =25 C see Figure 12 and j 13 Avalanche ruggedness E non-repetitive I =100 A V 30 V -- 1.7 J DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T =25 C j(init) 1 Refer to document 9397 750 12572 for further information. 2 Continuous current is limited by package.NXP Semiconductors BUK761R8-30C N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic Symbol 1 G gate D mb 2 D drain 3 S source G mb D mounting base mbb076 S connected to drain 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK761R8-30C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one lead SOT404 cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 30 V DS V drain-gate voltage R =20k -30 V DGR GS V gate-source voltage -20 20 V GS 1 2 I drain current T = 100 C V = 10 V see Figure 1 and 4 - 100 A D mb GS 1 2 T =25 C V = 10 V see Figure 1 and 4 - 100 A mb GS 1 3 T =25 C V = 10 V see Figure 1 and 4 - 312 A mb GS I peak drain current T =25 C t 10 s pulsed see Figure 4 - 1249 A DM mb p P total power dissipation T =25 C see Figure 2 - 333 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Avalanche ruggedness E non-repetitive I =100 A V 30 V R =50 -1.7 J DS(AL)S D sup GS drain-source avalanche V =10 V T =25 C GS j(init) energy 4 5 E repetitive drain-source see Figure 3 --J DS(AL)R 6 7 avalanche energy Source-drain diode 1 3 I source current T =25 C - 312 A S mb 1 2 T =25 C - 100 A mb I peak source current t 10 s pulsed T =25 C - 1249 A SM p mb BUK761R8-30C 2 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 20 August 2007 2 of 15