BUK7675-100A,118 NXP

BUK7675-100A N-channel TrenchMOS standard level FET Rev. 02 31 July 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V =10V T =25C --23 A D GS mb see Figure 1 and 3 P total power T = 25 C see Figure 2 --99 W tot mb dissipation Avalanche ruggedness E non-repetitive I =14 A V 100 V - - 100 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Static characteristics R drain-source V =10V I =13A - - 187 m DSon GS D on-state resistance T = 175 C see Figure 12 j and 13 V =10V I =13A - 6475m GS D T = 25 C see Figure 12 j and 13Nexperia BUK7675-100A N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7675-100A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) Nexperia B.V. 2017. All rights reserved BUK7675-100A 2 Product data sheet Rev. 02 31 July 2009 2 of 13