BUK7E4R3-75C,127 NXP

BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard level gate drive sources 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --75 V DS j j 1 2 I drain current V =10V T =25C see Figure 1 - - 100 A D GS mb see Figure 4 P total power dissipation T =25C see Figure 2 - - 333 W tot mb Static characteristics R drain-source on-state V =10V I =25A T =25C -3.7 4.3 m DSon GS D j resistance see Figure 7 see Figure 8 Avalanche ruggedness E non-repetitive I =100 A V 75 V R =50 - - 630 mJ DS(AL)S D sup GS drain-source V =10V T = 25 C unclamped GS j(init) avalanche energy 1 Continuous current is limited by package. 2 Refer to document 9397 750 12572 for further information. I2PAKBUK7E4R3-75C NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7E4R3-75C I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 BUK7E4R3-75C All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 19 April 2011 2 of 13