BUK7E2R3-40C,127 NXP

BUK7E2R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive Avalanche robust Suitable for thermally demanding environment up to 175C rating 1.3 Applications 12V Motor, lamp and solenoid loads High performance Pulse Width Modulation (PWM) applications High performance automotive power systems 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V =10V T =25C 1 - - 100 A D GS mb see Figure 1 see Figure 3 2 P total power T = 25 C see Figure 2 - - 333 W tot mb dissipation Static characteristics R drain-source V =10V I =25A - 1.96 2.3 m DSon GS D on-state resistance T = 25 C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I = 100 A V 40 V --1.2 J DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) 1 Refer to document 9397 750 12572 for further information. 2 Continuous current is limited by package.Nexperia BUK7E2R3-40C N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (TO-220AB I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7E2R3-40C TO-220AB plastic single-ended package (I2PAK) low-profile 3-lead TO-220AB SOT226 I2PAK Nexperia B.V. 2017. All rights reserved BUK7E2R3-40C 3 Product data sheet Rev. 03 26 January 2009 2 of 14