BUK755R2-40B,127 NXP

BUK755R2-40B N-channel TrenchMOS standard level FET Rev. 02 16 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard level gate drive sources 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V =10V T =25C 1 --75 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 203 W tot mb dissipation Avalanche ruggedness E non-repetitive I =75 A V 40 V - - 494 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -16 - nC GD GS D V =32V T =25C see DS j Figure 14 Static characteristics R drain-source V =10V I =25A -4.4 5.2 m DSon GS D on-state resistance T = 25 C see Figure 11 j see Figure 12 1 Continuous current is limited by package.NXP Semiconductors BUK755R2-40B N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78A (3-lead TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK755R2-40B 3-lead TO-220AB plastic single-ended package heatsink mounted 1 mounting hole SOT78A SC-46 3-lead TO-220AB BUK755R2-40B 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 16 January 2009 2 of 13