BUK725R0-40C,118 NXP

BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 23 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive Avalanche robust Suitable for thermally demanding environment up to 175C rating 1.3 Applications 12V Motor, lamp and solenoid loads High performance Pulse Width Modulation (PWM) applications High performance automotive power systems 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V =10V T =25C see Figure 1 1 --75 A D GS mb see Figure 3 P total power dissipation T =25C see Figure 2 - - 157 W tot mb Avalanche ruggedness E non-repetitive drain-source I =75A V 40 V R =50 V =10V - - 240 mJ DS(AL)S D sup GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A V =32V T =25C -27 -nC GD GS D DS j see Figure 15 Static characteristics R drain-source on-state V =10V I =25A T =25C -4.1 5 m DSon GS D j resistance see Figure 12 see Figure 13 1 Current is limited by package.Nexperia BUK725R0-40C N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (SC-63 DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK725R0-40C SC-63 plastic single-ended surface-mounted package (DPAK) 3 leads (one SOT428 DPAK lead cropped) Nexperia B.V. 2017. All rights reserved BUK725R0-40C 1 Product data sheet Rev. 01 23 March 2009 2 of 13