BUK7510-55AL,127 NXP

BUK7510-55AL N-channel TrenchMOS standard level FET Rev. 03 4 August 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for use in control systems due to stable operation in linear mode Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads DC motor control Automotive systems Repetitive clamped inductive switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current V =10V T =25C 1 --75 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 300 W tot mb dissipation Avalanche ruggedness E non-repetitive I =75 A V 55 V --1.1 J DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -50 - nC GD GS D V =44V T =25C DS j see Figure 15 Static characteristics R drain-source V =10V I =25A -8.5 10 m DSon GS D on-state resistance T = 25 C see Figure 12 j see Figure 13 1 Continuous current is limited by package.NXP Semiconductors BUK7510-55AL N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7510-55AL TO-220AB Plastic single-ended package heatsink mounted 1 mounting hole SOT78 SC-46 3-lead TO-220AB BUK7510-55AL 3 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 4 August 2009 2 of 13