X-On Electronics has gained recognition as a prominent supplier of BUK7212-55B,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7212-55B,118 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7212-55B,118 NXP

BUK7212-55B,118 electronic component of NXP
BUK7212-55B,118 NXP
BUK7212-55B,118 MOSFETs
BUK7212-55B,118  Semiconductors

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See Product Specifications
Part No. BUK7212-55B,118
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET HIGH PERF TRENCHMOS
Datasheet: BUK7212-55B,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.5464 ea
Line Total: USD 1366 
Availability - 0
Ship by Wed. 22 Jan
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Tue. 28 Jan to Mon. 03 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.5464

0
Ship by Tue. 28 Jan to Mon. 03 Feb
MOQ : 1
Multiples : 1
1 : USD 1.4037
10 : USD 1.2459
100 : USD 0.985
500 : USD 0.7638
1000 : USD 0.603

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

BUK7212-55B,118 Alternative Parts

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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We are delighted to provide the BUK7212-55B,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7212-55B,118 and other electronic components in the MOSFETs category and beyond.

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BUK7212-55B N-channel TrenchMOS standard level FET Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 185 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source T 25 C T 185C --55 V V DS j j voltage 1 I drain current V =10V T =25C --75 A D GS mb see Figure 3 see Figure 1 P total power T = 25 C see Figure 2 --167W tot mb dissipation Static characteristics drain-source V =10V I =25A -10.212 m R DSon GS D on-state T =25C see Figure 9 j resistance see Figure 10BUK7212-55B Nexperia N-channel TrenchMOS standard level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 55 V --173mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -12 -nC GD GS D V =44 V T =25C DS j see Figure 11 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7212-55B DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK7212-55B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 23 February 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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