X-On Electronics has gained recognition as a prominent supplier of BUK6226-75C,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK6226-75C,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK6226-75C,118 Nexperia

BUK6226-75C,118 electronic component of Nexperia
BUK6226-75C,118 Nexperia
BUK6226-75C,118 MOSFETs
BUK6226-75C,118  Semiconductors

Images are for reference only
See Product Specifications
Part No. BUK6226-75C,118
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CHAN 75V 33A
Datasheet: BUK6226-75C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.4074
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1534
10 : USD 1.013
100 : USD 0.7812
500 : USD 0.5787
1000 : USD 0.463
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.336
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.8273
10 : USD 0.8614
100 : USD 0.4373
1000 : USD 0.3967
2500 : USD 0.3587
10000 : USD 0.344
25000 : USD 0.339
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK6226-75C,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK6226-75C,118 and other electronic components in the MOSFETs category and beyond.

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BUK6226-75C N-channel TrenchMOS FET Rev. 01 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard and logic level gate drive sources 1.3 Applications 12 V and 24 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --75 V DS j j I drain current V =10V T =25C --33 A D GS mb see Figure 1 P total power dissipation T = 25 C see Figure 2 --80 W tot mb Static characteristics R drain-source on-state V =10V I =12A -24.529 m DSon GS D resistance T =25C see Figure 11 j Avalanche ruggedness non-repetitive I =33A V 75 V --42 mJ E DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =60V -9.4 -nC GD D DS V = 10 V see Figure 13 GS see Figure 14BUK6226-75C Nexperia N-channel TrenchMOS FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6226-75C DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK6226-75C All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 4 October 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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