ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FQD13N06L / FQU13N06L N-Channel QFET MOSFET FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 m Features 11 A, 60 V, R = 115 m (Max) V = 10 V, DS(on) GS I = 5.5 A Description D This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 4.8 nC) produced using ON Semiconductors proprietary Low Crss (Typ. 17 pF) planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to 100% Avalanche Tested reduce on-state resistance, and to provide superior Low Level Gate Drive Requirements Allowing switching performance and high avalanche energy Direct Operation form Logic Drivers strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. D 2, 4 4 4 1111 I-PAK 2 1 1 G 2 3 3 D-PAK o S 3 Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQD13N06L TM / FQU13N06L TU Unit FQU13N06LTU- WS V Drain-Source Voltage 60 V DSS I - Continuous (T = 25C) Drain Current 11 A D C - Continuous (T = 100C) 7 A C I Drain Current - Pulsed (Note 1) 44 A DM V Gate-Source Voltage 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 90 mJ AS I Avalanche Current (Note 1) 11 A AR E (Note 1) Repetitive Avalanche Energy 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25C) * 2.5 W P A D Power Dissipation (T = 25C) 28 W C - Derate above 25C 0.22 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case 5for Seconds Thermal Characteristics FQD13N06LTM Symbol Parameter FQU13N06LTU Unit FQU13N06LTU -WS R Thermal Resistance, Junction to Case, Max. 2.5 JC o Thermal Resistance, Junction to Ambient ( Minimum Pad of 2 -oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2000 Semiconductor Components Industries, LLC. Publication Order Number: FQU13N06L/D October-2017,Rev.2