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V = 10 V, DS(on) GS is produced using Fairchild Semiconductors proprietary I = 5. 0 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 8. 7 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching Low Crss (Typ. 20 pF) performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching Low Level Gate Drive Requirement Allowing power applications. Direct Operation Form Logic Drivers D D G S I-PAK D-PAK G G D S S Absolute Maximum Ratings T = 25C unless otherwise noted . C Symbol Parameter FQD13N10LTM / FQU13N10L TU Unit V Drain-Source Voltage 100 V DSS I - Continuous (T = 25C) Drain Current 10 A D C - Continuous (T = 100C) 6.3 A C I (Note 1) Drain Current - Pulsed 40 A DM V Gate-Source Voltage 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 95 mJ AS I Avalanche Current (Note 1) 10 A AR E (Note 1) Repetitive Avalanche Energy 4.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25C) * 2.5 W P A D Power Dissipation (T = 25C) 40 W C - Derate above 25C 0.32 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQD13N10LTM / Unit FQU13N10LTU R Thermal Resistance, Junction to Case, Max. 3.13 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQD13N10L / FQU13N10L Rev. 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