X-On Electronics has gained recognition as a prominent supplier of MCH6613-TL-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCH6613-TL-E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCH6613-TL-E ON Semiconductor

MCH6613-TL-E electronic component of ON Semiconductor
MCH6613-TL-E ON Semiconductor
MCH6613-TL-E MOSFETs
MCH6613-TL-E  Semiconductors

Images are for reference only
See Product Specifications
Part No. MCH6613-TL-E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PCH+NCH 2.5V DRIVE SERIES
Datasheet: MCH6613-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2715: USD 0.1795 ea
Line Total: USD 487.34 
Availability - 5820
Ship by Tue. 14 Jan to Mon. 20 Jan
MOQ: 2715  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820
Ship by Tue. 14 Jan to Mon. 20 Jan
MOQ : 2715
Multiples : 1
2715 : USD 0.1795

2910
Ship by Tue. 14 Jan to Mon. 20 Jan
MOQ : 2715
Multiples : 1
2715 : USD 0.1795

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCH6613-TL-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH6613-TL-E and other electronic components in the MOSFETs category and beyond.

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LOT No. LOT No. Ordering number : EN6920C MCH6613 Power MOSFET MCH6613 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max N-channel Drain to Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =100A 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =80mA 150 220 mS DS D R (on)1 I =80mA, V =4V 2.9 3.7 DS D GS Static Drain to Source On-State Resistance R (on)2 I =40mA, V =2.5V 3.7 5.2 DS D GS R (on)3 I =10mA, V =1.5V 6.4 12.8 DS D GS Input Capacitance Ciss 7.0 pF Output Capacitance Coss V =10V, f=1MHz 5.9 pF DS Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time t (on) 19 ns d Rise Time t 65 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 155 ns d Fall Time t 120 ns f Total Gate Charge Qg 1.58 nC Gate to Source Charge Qgs V =10V, V =10V, I =150mA 0.26 nC DS GS D Gate to Drain Miller Charge Qgd 0.31 nC Diode Forward Voltage V I =150mA, V =0V 0.87 1.2 V SD S GS P-channel Drain to Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--100A --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--50mA 80 110 mS DS D R (on)1 I =--50mA, V =--4V 8 10.4 DS D GS Static Drain to Source On-State Resistance R (on)2 I =--30mA, V =--2.5V 11 15.4 DS D GS R (on)3 I =--1mA, V =--1.5V 27 54 DS D GS Input Capacitance Ciss 7.5 pF Output Capacitance Coss V =--10V, f=1MHz 5.7 pF DS Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time t (on) 24 ns d Rise Time t 55 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 120 ns d Fall Time t 130 ns f Total Gate Charge Qg 1.43 nC Gate to Source Charge Qgs V =--10V, V =--10V, I =--100mA 0.18 nC DS GS D Gate to Drain Miller Charge Qgd 0.25 nC Diode Forward Voltage V I =--100mA, V =0V --0.83 --1.2 V SD S GS No.6920-2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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