LOT No. LOT No. MCH6662 Power MOSFET www.onsemi.com 20V, 160m, 2A, Dual N-Channel Features ON-Resistance Nch : R (on)1=120m (typ) DS 1.8V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Value Unit Drain-to-Source Voltage V 20 V DSS Gate-to-Source Voltage V 10 V GSS Drain Current (DC) I 2.0 A D Drain Current (Pulse) I PW 10 s, duty cycle 1% 8.0 A DP 2 Power Dissipation P When mounted on ceramic substrate (900mm 0.8mm) 1unit 0.8 W D Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient R 156.25 C/W JA 2 When mounted on ceramic substrate (900mm 0.8mm) 1unit Product & Package Information Package : MCPH6 JEITA, JEDEC : SC-88, SC-70-6, SOT-363 Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking XP TL Electrical Connection 65 4 132 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2015 Publication Order Number: 1 January 2015 - Rev. 1 MCH6662/DMCH6662 Electrical Characteristics at Ta=25C Value Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =20V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =1mA 0.4 1.3 V GS DS D g Forward Transconductance V =10V, I =1A 1.9 S FS DS D R (on)1 I =1.0A, V =4.5V 120 160 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =0.5A, V =2.5V 170 240 m DS D GS R (on)3 I =0.1A, V =1.8V 255 380 m DS D GS Input Capacitance Ciss 128 pF Output Capacitance Coss V =10V, f=1MHz 28 pF DS Reverse Transfer Capacitance Crss 21 pF Turn-ON Delay Time t (on) 5.1 ns d Rise Time t 11 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 14.5 ns d Fall Time t 12 ns f Total Gate Charge Qg 1.8 nC Gate-to-Source Charge Qgs V =10V, V =4.5V, I =2A 0.3 nC DS GS D Gate-to-Drain Miller Charge Qgd 0.55 nC Forward Diode Voltage V I =2A, V =0V 0.85 1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =10V V IN DD 4.5V 0V I =1.0A D V IN R =10 L D V OUT PW=10s D.C.1% G MCH6662 P.G 50 S www.onsemi.com 2