MCH6604-TL-E ON Semiconductor

LOT No. LOT No. Ordering number : EN6459C MCH6604 N-Channel Power MOSFET MCH6604 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =1mA, V =0V 50 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =50V, V =0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =100A 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =50mA 130 180 mS DS D R (on)1 I =50mA, V =4V 6 7.8 DS D GS Static Drain to Source On-State Resistance R (on)2 I =30mA, V =2.5V 7.1 9.9 DS D GS R (on)3 I =10mA, V =1.5V 10 20 DS D GS Input Capacitance Ciss 6.6 pF Output Capacitance Coss V =10V, f=1MHz 4.7 pF DS Reverse Transfer Capacitance Crss 1.7 pF Turn-ON Delay Time t (on) 18 ns d Rise Time t 42 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 190 ns d Fall Time t 105 ns f Total Gate Charge Qg 1.57 nC Gate to Source Charge Qgs V =10V, V =10V, I =100mA 0.20 nC DS GS D Gate to Drain Miller Charge Qgd 0.32 nC Diode Forward Voltage V I =100mA, V =0V 0.85 1.2 V SD S GS Switching Time Test Circuit V =25V DD V IN I =50mA D 4V R =500 L 0V D V OUT V IN PW=10 s D.C.1% G P.G 50 MCH6604 S Ordering Information Device Package Shipping memo MCH6604-TL-E MCPH6 3,000pcs./reel Pb-Free No.6459-2/6