X-On Electronics has gained recognition as a prominent supplier of FQT13N06LTF MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQT13N06LTF MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQT13N06LTF ON Semiconductor

FQT13N06LTF electronic component of ON Semiconductor
FQT13N06LTF ON Semiconductor
FQT13N06LTF MOSFETs
FQT13N06LTF  Semiconductors

Images are for reference only
See Product Specifications
Part No. FQT13N06LTF
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: 60V 2.8A 2.1W 110mO@10V,1.4A N Channel SOT-223 MOSFETs ROHS
Low-Voltage, Low-Dropout Linear Voltage Regulator.
Datasheet: FQT13N06LTF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 4000
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8000 : USD 0.3526
12000 : USD 0.349
20000 : USD 0.3456
24000 : USD 0.3421
40000 : USD 0.3387
60000 : USD 0.3353
100000 : USD 0.332
200000 : USD 0.3287
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MOQ : 1
Multiples : 1
1 : USD 0.5786
10 : USD 0.459
25 : USD 0.4498
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250 : USD 0.4498
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1 : USD 0.8563
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4000 : USD 0.3294
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4000 : USD 1.5241
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4000 : USD 0.3249
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MOQ : 1
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1 : USD 0.6681
10 : USD 0.5489
100 : USD 0.4086
500 : USD 0.3575
1000 : USD 0.3062
4000 : USD 0.2706
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MOQ : 1
Multiples : 1
1 : USD 1.3349
5 : USD 0.6004
25 : USD 0.54
39 : USD 0.3928
106 : USD 0.3718
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MOQ : 25
Multiples : 1
25 : USD 0.4523
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MOQ : 25
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25 : USD 0.3803
100 : USD 0.3162
250 : USD 0.3132
500 : USD 0.307
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Multiples : 1
25 : USD 0.3803
100 : USD 0.3162
250 : USD 0.3132
500 : USD 0.307
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
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Transistor Type
Type
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Cnhts
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We are delighted to provide the FQT13N06LTF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQT13N06LTF and other electronic components in the MOSFETs category and beyond.

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The FQT13N06LTF is a N-Channel MOSFET (field-effect transistor) produced by ON Semiconductor. This N-channel MOSFET is part of the SuperFET family and has a 60 V drain-source voltage, a -10 V gate-source voltage, and is capable of carrying 50 A of continuous drain current. It also has a low on-state resistance of 0.018O and has temperature ratings of -55°C to 150°C. The FQT13N06LTF is typically used for DC/DC conversion and switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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