X-On Electronics has gained recognition as a prominent supplier of MCH6545-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MCH6545-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MCH6545-TL-E ON Semiconductor

MCH6545-TL-E electronic component of ON Semiconductor
MCH6545-TL-E ON Semiconductor
MCH6545-TL-E Bipolar Transistors - BJT
MCH6545-TL-E  Semiconductors

Images are for reference only
See Product Specifications
Part No. MCH6545-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT BIP PNPNPN 0.5A 50V
Datasheet: MCH6545-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6287 ea
Line Total: USD 0.63 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 0.5003
10 : USD 0.4123
25 : USD 0.3847
100 : USD 0.3076
500 : USD 0.2417
1000 : USD 0.1868

0
Ship by Fri. 02 May to Thu. 08 May

Multiples : 6000

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.6287
10 : USD 0.5389
100 : USD 0.3209
500 : USD 0.2599
1000 : USD 0.2062
3000 : USD 0.1947
6000 : USD 0.1889
9000 : USD 0.183
24000 : USD 0.183

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1537
Multiples : 1
1537 : USD 0.3051

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCH6545-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH6545-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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LOT No. LOT No. Ordering number : EN8953A MCH6545 Bipolar Transistor MCH6545 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)100 nA CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)100 nA EBO EB C DC Current Gain h V =(--)2V, I =(--)10mA (200)300 (500)700 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)50mA (690)500 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (3.8)2.8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)100mA, I =(--)10mA (--60)50 (--120)100 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)100mA, I =(--)10mA (--)0.9 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--50)60 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)5 V (BR)EBO E C Turn-ON Time t (30)30 ns on Storage Time t See speci ed Test Circuit. (170)340 ns stg Fall Time t (30)55 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 ++ 220 F 470 F V = --5V V =25V BE CC I =20I = --20I =200mA C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo MCH6545-TL-E MCPH6 3,000pcs./reel Pb Free I -- V PNP I -- V NPN C CE C CE --500 500 --450 450 --400 400 --350 350 --300 300 --250 250 --200 200 --150 150 200A --100 100 --200A --50 50 I =0A I =0A B B 0 0 0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 0 100 200 300 400 500 600 700 800 900 1000 Collector-to-Emitter Voltage, V -- mV IT05118 Collector-to-Emitter Voltage, V -- mV IT05106 CE CE No.8953-2/8 1mA --500A 5mA 3mA 600A 2mA 7mA --1mA --10mA --2mA --5mA 8mA --15mA 10mA --20mA --25mA --30mA --40mA 20mA 15mA --50mA 30mA Collector Current, I -- mA C Collector Current, I -- mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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