STH110N10F7-6 STMicroelectronics

STH110N10F7-2, STH110N10F7-6 N-channel 100 V, 4.9 m typ.,110 A, STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data TAB Features TAB R DS(on) Order code V I P DS D TOT max. 7 2 STH110N10F7-2 3 1 100 V 6.5 m 110 A 150 W 1 STH110N10F7-6 2 2 H PAK-6 H PAK-2 Figure 1: Internal schematic diagram Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on- resistance, while also reducing internal S(2,3,4,5,6,7) capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing 2 STH110N10F7-2 H PAK-2 Tape 110N10F7 2 and reel STH110N10F7-6 H PAK-6 November 2014 DocID024027 Rev 4 1/19 www.st.com This is information on a product in full production. Contents STH110N10F7-2, STH110N10F7-6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 2 4.1 H PAK-2 package information ......................................................... 10 2 4.2 H PAK-6 package information ......................................................... 13 4.3 Packing information ......................................................................... 16 5 Revision history ............................................................................ 18 2/19 DocID024027 Rev 4