NTMS4176P
Power MOSFET
-30 V, -9.6 A, P-Channel, SOIC-8
Features
Low R ) to Minimize Conduction Losses
DS(on
Low Capacitance to Minimize Driver Losses
NTMS4176P
THERMAL RESISTANCE RATINGS
Rating Symbol Max Unit
Junction-to-Ambient Steady State (Note 3) R 87
JA
Junction-to-Ambient t10 s (Note 3) R 50
JA
C/W
Junction-to-FOOT (Drain) R 22
JF
Junction-to-Ambient Steady State (Note 4) 154
R
JA
3. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
4. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)jk
J
Characteristic Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V V = 0 V, I = -250 A -30 V
(BR)DSS
GS D
Drain-to-Source Breakdown Voltage Tem V /T 29
(BR)DSS J
mV/C
perature Coefficient
T = 25C -1.0
Zero Gate Voltage Drain Current I
DSS V = 0 V, J
GS
A
V = -24 V
DS
T = 85C -5.0
J
Gate-to-Source Leakage Current I V = 0 V, V = 25 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V V = V , I = -250 A -1.5 -2.5 V
GS(TH) GS DS D
Negative Threshold Temperature Coeffi V /T 6.0
GS(TH) J
mV/C
cient
Drain-to-Source On Resistance R V = -10 V I = -9.6 A 14 18
DS(on) GS D
m
V = -4.5 V I = -7.5 A 23 30
GS D
Forward Transconductance g V = -1.5 V, I = -9.6 A 21.5 S
FS DS D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C 1720
ISS
V = 0 V, f = 1.0 MHz,
GS
Output Capacitance C 370 pF
OSS
V = -24 V
DS
Reverse Transfer Capacitance C 256
RSS
Total Gate Charge Q 17
G(TOT)
Threshold Gate Charge Q 2.0
G(TH)
V = -4.5 V, V = -15 V,
GS DS
nC
I = -9.6 A
D
Gate-to-Source Charge Q 6.0
GS
Gate-to-Drain Charge Q 8.4
GD
Total Gate Charge Q V = -10 V, V = -15 V, 32.6
G(TOT) GS DS
nC
I = -9.6 A,
D
Gate Resistance R 3.0 4.5
G
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time t 15
d(ON)
Rise Time t 9.0
r V = -10 V, V = -15 V,
GS DD
ns
I = -1.0 A, R = 6.0
D G
Turn-Off Delay Time t 19.5
d(OFF)
Fall Time t 42.5
f
DRAIN-TO-SOURCE CHARACTERISTICS
Forward Diode Voltage V T = 25C -0.75 -1.0 V
SD V = 0 V J
GS
I = -2.1 A
D
T = 125C 0.59
J
Reverse Recovery Time t 32.4
RR
ns
Charge Time T 14
a
V = 0 V, d /d = 100 A/s,
GS IS t
I = -2.1 A
S
Discharge Time T 18.4
b
Reverse Recovery Time Q 23 nC
RR
5. Pulse Test: pulse width 300 s, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.