NTMFS4C08N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 52 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R MAX I MAX (BR)DSS DS(ON) D Compliant 5.8 m 10 V 30 V 52 A Applications 8.5 m 4.5 V CPU Power Delivery DCDC Converters D (58) MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 16.4 A A D Current R JA S (1,2,3) T = 80C 12.3 A (Note 1) NCHANNEL MOSFET Power Dissipation T = 25C P 2.51 W A D R (Note 1) JA MARKING Continuous Drain T = 25C I 25.3 A A D DIAGRAMS Current R 10 s JA D T = 80C 19.0 A (Note 1) S D Power Dissipation T = 25C P 6.0 W SO8 FLAT LEAD A D S 4C08N R 10 s (Note 1) CASE 488AA JA Steady AYWZZ S State STYLE 1 Continuous Drain T = 25C I 9.0 A A D G D Current R 1 JA D T = 80C 6.8 A (Note 2) A = Assembly Location Power Dissipation T = 25C P 0.76 W A D Y = Year R (Note 2) JA W = Work Week Continuous Drain T = 25C I 52 A C D ZZ = Lot Traceabililty Current R JC T =80C 39 C (Note 1) Power Dissipation T = 25C P 25.5 W C D ORDERING INFORMATION R (Note 1) JC Pulsed Drain Current T = 25C, t = 10 s I 144 A Device Package Shipping A p DM Pulsed Source T = 25C, t = 10 s I 560 A A p SM NTMFS4C08NT1G SO8 FL 1500 / Current (Body Diode) (PbFree) Tape & Reel Current Limited by Package T = 25C I 80 A A Dmax NTMFS4C08NT3G SO8 FL 5000 / Operating Junction and Storage T , 55 to C J (PbFree) Tape & Reel Temperature T +150 STG For information on tape and reel specifications, Source Current (Body Diode) I 23 A S including part orientation and tape sizes, please Drain to Source DV/DT dV/d 7.0 V/ns t refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Single Pulse DraintoSource Avalanche E 42 mJ AS Energy (T = 25C, V = 10 V, I = 29 A , J GS L pk L = 0.1 mH, R = 25 ) (Note 3) GS Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 1 Publication Order Number: May, 2019 Rev. 6 NTMFS4C08N/DNTMFS4C08N 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum rating. Parts are 100% tested at T = 25C, J V = 10 V, I = 21 Apk, E = 22 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 4.9 JC JunctiontoAmbient Steady State (Note 4) R 49.8 JA C/W JunctiontoAmbient Steady State (Note 5) 164.6 R JA JunctiontoAmbient (t 10 s) (Note 4) R 21.0 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 8.4 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 13.8 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.9 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 18 A 4.6 5.8 DS(on) GS D m V = 4.5 V I = 30 A 6.8 8.5 GS D Forward Transconductance g V = 1.5 V, I = 15 A 42 S FS DS D Gate Resistance R T = 25C 0.3 1.0 2.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1113 1670 ISS Output Capacitance C 702 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 39 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.035 RSS ISS GS DS Total Gate Charge Q 8.4 G(TOT) Threshold Gate Charge Q 1.8 G(TH) nC GatetoSource Charge Q 3.5 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 3.3 GD Gate Plateau Voltage V 3.4 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 18.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2