NTMFS4C10N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 46 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 6.95 m 10 V Compliant 30 V 46 A 10.8 m 4.5 V Applications CPU Power Delivery D (58) DCDC Converters MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V G (4) DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 15.0 A A D S (1,2,3) Current R JA NCHANNEL MOSFET T = 80C 11.2 A (Note 1) Power Dissipation T = 25C P 2.49 W A D MARKING R (Note 1) JA DIAGRAMS Continuous Drain T = 25C I 22.5 A A D D Current R 10 s JA T = 80C 16.8 A S D (Note 1) SO8 FLAT LEAD S 4C10N Power Dissipation T = 25C P 5.6 W CASE 488AA A D AYWZZ S R 10 s (Note 1) JA STYLE 1 Steady G D State Continuous Drain T = 25C I 8.2 A 1 A D D Current R JA T = 80C 6.2 A (Note 2) A = Assembly Location Y = Year Power Dissipation T = 25C P 0.75 W A D R (Note 2) W = Work Week JA ZZ = Lot Traceabililty Continuous Drain T = 25C I 46 A C D Current R JC T =80C 34 C (Note 1) Power Dissipation T = 25C P 23.6 W C D ORDERING INFORMATION R (Note 1) JC Device Package Shipping Pulsed Drain T = 25C, t = 10 s I 132 A A p DM Current NTMFS4C10NT1G SO8 FL 1500 / Current Limited by Package T = 25C I 80 A A Dmax (PbFree) Tape & Reel Operating Junction and Storage T , 55 to C J For information on tape and reel specifications, Temperature T +150 STG including part orientation and tape sizes, please Source Current (Body Diode) I 21 A S refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Drain to Source dV/dt dV/d 7.0 V/ns t Single Pulse DraintoSource Avalanche E 31 mJ AS Energy (T = 25C, V = 10 V, I = 25 A , J GS L pk L = 0.1 mH, R = 25 ) (Note 3) GS Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 9 NTMFS4C10N/DNTMFS4C10N 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum rating. Parts are 100% tested at T = 25C, J V = 10 V, I = 17 Apk, E = 14 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.3 JC JunctiontoAmbient Steady State (Note 4) R 50.3 JA C/W JunctiontoAmbient Steady State (Note 5) 165.9 R JA JunctiontoAmbient (t 10 s) (Note 4) R 22.2 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 7.1 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 14.5 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 5.8 6.95 DS(on) GS D m V = 4.5 V I = 15 A 8.9 10.8 GS D Forward Transconductance g V = 1.5 V, I = 15 A 43 S FS DS D Gate Resistance R T = 25C 0.3 1.0 2.0 G A CHARGES AND CAPACITANCES Input Capacitance C 987 ISS Output Capacitance C 574 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 162 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.165 RSS ISS GS DS Total Gate Charge Q 9.7 G(TOT) Threshold Gate Charge Q 1.5 G(TH) nC GatetoSource Charge Q 2.8 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 4.8 GD Gate Plateau Voltage V 3.2 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 18.6 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) TurnOn Delay Time t 9.0 d(ON) Rise Time t 34 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 14 d(OFF) Fall Time t 7.0 f www.onsemi.com 2