X-On Electronics has gained recognition as a prominent supplier of NTMFS5C423NLT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS5C423NLT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS5C423NLT1G ON Semiconductor

NTMFS5C423NLT1G electronic component of ON Semiconductor
NTMFS5C423NLT1G ON Semiconductor
NTMFS5C423NLT1G MOSFETs
NTMFS5C423NLT1G  Semiconductors

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See Product Specifications
Part No. NTMFS5C423NLT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET SO8FL 40V 150A 2MO
Datasheet: NTMFS5C423NLT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8 ea
Line Total: USD 1.8 
Availability - 25
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
25
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.8
10 : USD 1.116
100 : USD 0.7315
250 : USD 0.7304
500 : USD 0.5995
1000 : USD 0.5984
1500 : USD 0.5456
3000 : USD 0.5225

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTMFS5C423NLT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS5C423NLT1G and other electronic components in the MOSFETs category and beyond.

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NTMFS5C423NL MOSFET Power, Single, N-Channel 40 V, 2.0 m , 150 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses V R MAX I MAX G (BR)DSS DS(ON) D These Devices are PbFree and are RoHS Compliant 2.0 m 10 V 40 V 150 A 3.0 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS D (5) GatetoSource Voltage V 20 V GS Continuous Drain I A T = 25C 150 C D Current R JC T = 100C 110 (Notes 1, 3) C Steady G (4) State Power Dissipation T = 25C P 83 W C D R (Note 1) JC T = 100C 42 C S (1,2,3) Continuous Drain T = 25C I 31 A A D NCHANNEL MOSFET Current R JA T = 100C 22 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 3.7 W A D MARKING R (Notes 1 & 2) JA T = 100C 1.8 DIAGRAM A Pulsed Drain Current I 900 A D T = 25C, t = 10 s A p DM 1 S D Operating Junction and Storage Temperature T , T 55 to C J stg DFN5 5C423L S +175 (SO8FL) AYWZZ S Source Current (Body Diode) I 81 A S CASE 488AA G D STYLE 1 Single Pulse DraintoSource Avalanche E 280 mJ D AS Energy (I = 14 A) L(pk) 5C423L = Specific Device Code Lead Temperature for Soldering Purposes T 260 C L A = Assembly Location (1/8 from case for 10 s) Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the W = Work Week device. If any of these limits are exceeded, device functionality should not be ZZ = Lot Traceability assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS ORDERING INFORMATION Parameter Symbol Value Unit See detailed ordering, marking and shipping information on JunctiontoCase Steady State R 1.8 C/W page 5 of this data sheet. JC JunctiontoAmbient Steady State (Note 2) R 41 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2019 Rev. 4 NTMFS5C423NL/DNTMFS5C423NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 17 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.3 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 1.6 2.0 DS(on) GS D m V = 4.5 V I = 50 A 2.4 3.0 GS D Forward Transconductance g V = 15 V, I = 50 A 140 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 3100 ISS Output Capacitance C 1300 V = 0 V, f = 1 MHz, V = 20 V pF OSS GS DS Reverse Transfer Capacitance C 60 RSS Total Gate Charge Q V = 4.5 V, V = 20 V I = 50 A 23 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 50 G(TOT) GS DS D Threshold Gate Charge Q 5.0 nC G(TH) GatetoSource Charge Q 9.8 GS V = 4.5 V, V = 20 V I = 50 A GS DS D GatetoDrain Charge Q 6.7 GD Plateau Voltage V 3.1 V GP Gate Resistance R T = 25C 0.1 1.5 3.0 G A SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 12 d(ON) Rise Time t 7.4 r V = 4.5 V, V = 20 V, GS DS ns I = 50 A, R = 1.0 D G TurnOff Delay Time t 28 d(OFF) Fall Time t 8.1 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.85 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.73 J Reverse Recovery Time t 46 RR Charge Time t 23 a ns V = 0 V, dI /d = 100 A/ s, GS s t I = 50 A S Discharge Time t 23 b Reverse Recovery Charge Q 40 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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