X-On Electronics has gained recognition as a prominent supplier of NTMFS5C430NLT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS5C430NLT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS5C430NLT1G ON Semiconductor

NTMFS5C430NLT1G electronic component of ON Semiconductor
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Part No.NTMFS5C430NLT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET SO8FL 40V 200A
Datasheet: NTMFS5C430NLT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6622 ea
Line Total: USD 0.66 
Availability - 2763
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1456
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 1.7236
10 : USD 1.3244
25 : USD 1.3112
100 : USD 1.021
250 : USD 1.007
500 : USD 0.8695
1000 : USD 0.8289

2763
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6622
10 : USD 0.5436
30 : USD 0.4854
100 : USD 0.427
500 : USD 0.365
1500 : USD 0.348

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTMFS5C430NLT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS5C430NLT1G and other electronic components in the MOSFETs category and beyond.

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NTMFS5C430NL MOSFET Power, Single, N-Channel 40 V, 1.4 m , 200 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses V R MAX I MAX G (BR)DSS DS(ON) D These Devices are PbFree and are RoHS Compliant 1.4 m 10 V 40 V 200 A 2.2 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS D (5) GatetoSource Voltage V 20 V GS Continuous Drain I A T = 25C 200 C D Current R JC T = 100C 140 (Notes 1, 3) C Steady G (4) State Power Dissipation T = 25C P 110 W C D R (Note 1) JC T = 100C 53 C S (1,2,3) Continuous Drain T = 25C I 38 A A D NCHANNEL MOSFET Current R JA T = 100C 27 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 3.8 W A D MARKING R (Notes 1 & 2) JA T = 100C 1.9 DIAGRAM A Pulsed Drain Current I 900 A D T = 25C, t = 10 s A p DM 1 S D Operating Junction and Storage Temperature T , T 55 to C J stg DFN5 5C430L S +175 (SO8FL) AYWZZ S Source Current (Body Diode) I 120 A S CASE 488AA G D STYLE 1 Single Pulse DraintoSource Avalanche E 493 mJ D AS Energy (I = 15 A) L(pk) 5C430L = Specific Device Code Single Pulse DraintoSource Voltage V 48 V DSM A = Assembly Location (t = 10 s) p Y = Year W = Work Week Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering, marking and shipping information on THERMAL RESISTANCE MAXIMUM RATINGS page 5 of this data sheet. Parameter Symbol Value Unit JunctiontoCase Steady State R 1.4 C/W JC JunctiontoAmbient Steady State (Note 2) R 40 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 3 NTMFS5C430NL/DNTMFS5C430NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 1.3 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.6 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 1.2 1.4 DS(on) GS D m V = 4.5 V I = 50 A 1.7 2.2 GS D Forward Transconductance g V = 15 V, I = 50 A 180 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 4300 4942 ISS Output Capacitance C 1900 2850 V = 0 V, f = 1 MHz, V = 20 V pF OSS GS DS Reverse Transfer Capacitance C 72 144 RSS Total Gate Charge Q V = 4.5 V, V = 20 V I = 50 A 32 45 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 70 82 G(TOT) GS DS D Threshold Gate Charge Q 7.0 10 nC G(TH) GatetoSource Charge Q 12 15 GS V = 4.5 V, V = 20 V I = 50 A GS DS D GatetoDrain Charge Q 9.0 16 GD Plateau Voltage V 2.9 5.0 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 15 28 d(ON) Rise Time t 140 273 r V = 4.5 V, V = 20 V, GS DS ns I = 50 A, R = 1.0 D G TurnOff Delay Time t 31 67 d(OFF) Fall Time t 9 19 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.81 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.68 J Reverse Recovery Time t 61 77 RR Charge Time t 29 38 ns a V = 0 V, dI /dt = 100 A/ s, GS s I = 50 A S Discharge Time t 32 50 b Reverse Recovery Charge Q 80 92 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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