X-On Electronics has gained recognition as a prominent supplier of NTMFS5C442NLT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS5C442NLT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS5C442NLT1G ON Semiconductor

NTMFS5C442NLT1G electronic component of ON Semiconductor
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Part No.NTMFS5C442NLT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET SO8FL 40V 126A 2.8MO
Datasheet: NTMFS5C442NLT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0132 ea
Line Total: USD 1.01 
Availability - 1412
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1412
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0132
10 : USD 0.8211
100 : USD 0.7061
250 : USD 0.7049
500 : USD 0.6152
1000 : USD 0.6129
1500 : USD 0.5681
3000 : USD 0.5485

   
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We are delighted to provide the NTMFS5C442NLT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS5C442NLT1G and other electronic components in the MOSFETs category and beyond.

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NTMFS5C442NL Power MOSFET 40 V, 2.5 m , 130 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G These Devices are PbFree and are RoHS Compliant V R MAX I MAX (BR)DSS DS(ON) D MAXIMUM RATINGS (T = 25C unless otherwise noted) J 2.5 m 10 V 40 V 130 A Parameter Symbol Value Unit 3.7 m 4.5 V DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS D (5) Continuous Drain T = 25C I 130 A C D Current R JC T = 100C 81 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 69 W C D (Note 1) R JC T = 100C 28 C G (4) Continuous Drain T = 25C I 27 A A D Current R JA S (1,2,3) T = 100C 17 (Notes 1, 2, 3) A Steady State NCHANNEL MOSFET Power Dissipation T = 25C P 3.1 W A D R (Notes 1 & 2) JA T = 100C 1.2 A Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM MARKING DIAGRAM Operating Junction and Storage Temperature T , T 55 to C J stg +175 D 1 Source Current (Body Diode) I 77 A S D S DFN5 5C442L S Single Pulse DraintoSource Avalanche E 265 mJ AS (SO8FL) AYWZZ S Energy (I = 10 A) L(pk) CASE 488AA G D Lead Temperature for Soldering Purposes T 260 C STYLE 1 L D (1/8 from case for 10 s) 5C442L = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the A = Assembly Location device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. W = Work Week THERMAL RESISTANCE MAXIMUM RATINGS ZZ = Lot Traceability Parameter Symbol Value Unit JunctiontoCase Steady State R 1.8 C/W JC ORDERING INFORMATION JunctiontoAmbient Steady State (Note 2) R 41 JA See detailed ordering, marking and shipping information in the 1. The entire application environment impacts the thermal resistance values shown, package dimensions section on page 5 of this data sheet. they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2018 Rev. 6 NTMFS5C442NL/DNTMFS5C442NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 24.8 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 90 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.4 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 2.0 2.5 DS(on) GS D m V = 4.5 V I = 50 A 2.9 3.7 GS D Forward Transconductance g V = 15 V, I = 50 A 116 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 3100 ISS Output Capacitance C 1100 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 37 RSS Total Gate Charge Q V = 4.5 V, V = 32 V I = 50 A 23 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 32 V I = 50 A 50 G(TOT) GS DS D Threshold Gate Charge Q 5.0 nC G(TH) GatetoSource Charge Q 9.8 GS V = 4.5 V, V = 32 V I = 50 A GS DS D GatetoDrain Charge Q 6.7 GD Plateau Voltage V 3.1 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 12 d(ON) Rise Time t 8.3 r V = 4.5 V, V = 32 V, GS DS ns I = 50 A, R = 1.0 D G TurnOff Delay Time t 28 d(OFF) Fall Time t 9.4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.85 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.73 J Reverse Recovery Time t 46 RR Charge Time t 23 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 50 A S Discharge Time t 23 b Reverse Recovery Charge Q 40 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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