X-On Electronics has gained recognition as a prominent supplier of 2N7002E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002E MOSFETs are a product manufactured by SLKORMICRO. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002E SLKORMICRO

2N7002E electronic component of SLKORMICRO
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See Product Specifications
Part No.2N7002E
Manufacturer: SLKORMICRO
Category: MOSFETs
Description: MOSFET N Trench 60V 300mA 2.5V @ 250uA 3 Ω @ 500mA,10V SOT-23 RoHS
Datasheet: 2N7002E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.0189 ea
Line Total: USD 0.94 
Availability - 12828
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
12828
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 50
Multiples : 50
50 : USD 0.0189
500 : USD 0.0151
3000 : USD 0.012
6000 : USD 0.0108
24000 : USD 0.0097
51000 : USD 0.009

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
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We are delighted to provide the 2N7002E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002E and other electronic components in the MOSFETs category and beyond.

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The 2N7002E is a N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) manufactured by SLKORMICRO. It is housed in a SOT-23 RoHS package and has a trench architecture. It has a maximum drain source voltage (VDS) of 60V, maximum drain current (ID) of 300mA, maximum gate source voltage (VGS) of 2.5V, gate leakage current (IGSS) of 250uA, drain-source on resistance (RDSON) of 3?, and continuous drain current (ID) of 500mA. Its maximum drain-source breakdown voltage (BVDSS) is 10V. It features low on-state resistance and fast switching times.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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