X-On Electronics has gained recognition as a prominent supplier of G1L9N06 MOSFET across the USA, India, Europe, Australia, and various other global locations. G1L9N06 MOSFET are a product manufactured by Lite-On. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

G1L9N06 Lite-On

G1L9N06 electronic component of Lite-On
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See Product Specifications
Part No.G1L9N06
Manufacturer: Lite-On
Category: MOSFET
Description: MOSFET N Trench 60V 28A (Tc) 3V @ 250uA 9 mΩ @ 17A,10V DFN3x3 RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.326 ea
Line Total: USD 0.33

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 0.326
10 : USD 0.2708
30 : USD 0.2308
100 : USD 0.1977
500 : USD 0.1921
1000 : USD 0.1893

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
LoadingGif
 
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We are delighted to provide the G1L9N06 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the G1L9N06 and other electronic components in the MOSFET category and beyond.

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The G1L9N06 is a MOSFET N Trench 60V 28A (Tc) 3V @ 250uA 9 mO @ 17A, 10V chip manufactured by Lite-On. It features a small DFN3x3 (Dual Flat No Lead) package that is RoHS compliant, allowing it to be used in a wide range of applications. This device has a maximum drain-source breakdown voltage of 60V, a maximum Drain-Source ON Resistance (RDS(on)) of 9 mO, an IDS (Continuous Drain Current) of 28A, and a threshold voltage of 3V (at a gate current of 250uA). This device also has a maximum Drain-Source Volkssatz (VDSS) of 10V, making it ideal for switching applications with relatively low gate-drive requirements.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LITEON
LITE-ON
Lite-On Electronics
Lite-On Inc
Lite-On Inc.
Liteon Opto
LITE-ON SEMICONDUCTOR CORP.
LTN

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