X-On Electronics has gained recognition as a prominent supplier of NTMFS5C426NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS5C426NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS5C426NT1G ON Semiconductor

NTMFS5C426NT1G electronic component of ON Semiconductor
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Part No.NTMFS5C426NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET T6D3F 40V NFET
Datasheet: NTMFS5C426NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4522 ea
Line Total: USD 1.45 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 1.6159
3000 : USD 1.5996
6000 : USD 1.5836
9000 : USD 1.5678
12000 : USD 1.5522
15000 : USD 1.5366
24000 : USD 1.5213
30000 : USD 1.5061
75000 : USD 1.491

0
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 1.4522
10 : USD 1.2423
30 : USD 1.1278
100 : USD 0.998
500 : USD 0.855
1500 : USD 0.8301

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 5.859
10 : USD 2.1492
100 : USD 1.7928
250 : USD 1.7712
500 : USD 1.4904
1000 : USD 1.3824

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTMFS5C426NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS5C426NT1G and other electronic components in the MOSFETs category and beyond.

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MOSFET Power, Single N-Channel 40 V, 1.3 m , 235 A NTMFS5C426N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree and are RoHS Compliant 40 V 1.3 m 10 V 235 A MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (5,6) DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 235 A C D Current R G (4) JC T = 100C 166 (Notes 1, 3) C Steady State Power Dissipation P W T = 25C 128 C D S (1,2,3) R (Note 1) JC T = 100C 64 C NCHANNEL MOSFET Continuous Drain T = 25C I 41 A A D Current R JA T = 100C 29 (Notes 1, 2, 3) A Steady MARKING State Power Dissipation T = 25C P 3.8 W DIAGRAM A D R (Notes 1, 2) JA D T = 100C 1.9 A 1 S D Pulsed Drain Current T = 25C, t = 10 s I 900 A DM A p DFN5 5C426N S Operating Junction and Storage Temperature T , T 55 to C (SO8FL) AYWZZ S J stg Range +175 CASE 488AA G D STYLE 1 D Source Current (Body Diode) I 122 A S A = Assembly Location Single Pulse DraintoSource Avalanche E 739 mJ AS Y = Year Energy (I = 19 A) L(pk) W = Work Week Lead Temperature for Soldering Purposes T 260 C L ZZ = Lot Traceability (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information in the THERMAL RESISTANCE MAXIMUM RATINGS package dimensions section on page 5 of this data sheet. Parameter Symbol Value Unit JunctiontoCase Steady State R 1.2 C/W JC JunctiontoAmbient Steady State (Note 2) 39 R JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2020 Rev. 2 NTMFS5C426N/DNTMFS5C426N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 9.6 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 40 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 170 A 2.5 3.5 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 8.6 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 1.1 1.3 m DS(on) GS D Forward Transconductance g V =15 V, I = 50 A 145 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 4300 ISS Output Capacitance C 2100 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 59 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 65 G(TOT) GS DS D Threshold Gate Charge Q 13 G(TH) nC GatetoSource Charge Q 20 GS V = 10 V, V = 20 V I = 50 A GS DS D GatetoDrain Charge Q 12 GD Plateau Voltage V 4.7 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 15 d(ON) Rise Time t 47 r V = 10 V, V = 20 V, GS DS ns I = 50 A, R = 2.5 D G TurnOff Delay Time t 36 d(OFF) Fall Time t 9.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.82 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.68 J Reverse Recovery Time t 63 RR Charge Time t 34 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 29 b Reverse Recovery Charge Q 92 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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