NTMFS4C06N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 69 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 4.0 m 10 V Compliant 30 V 69 A 6.0 m 4.5 V Applications CPU Power Delivery DCDC Converters D (58) MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 20.0 A A D Current R S (1,2,3) JA T = 80C 14.9 A (Note 1) NCHANNEL MOSFET Power Dissipation T = 25C P 2.55 W A D R (Note 1) JA Continuous Drain T = 25C I 31.6 A A D MARKING Current R 10 s JA DIAGRAM T = 80C 23.7 A (Note 1) D Power Dissipation T = 25C P 6.4 W A D S D R 10 s (Note 1) JA SO8 FLAT LEAD Steady 4C06N S CASE 488AA State Continuous Drain T = 25C I 11 A A D AYWZZ S STYLE 1 Current R JA G D T = 80C 8.2 A (Note 2) 1 D Power Dissipation T = 25C P 0.77 W A D R (Note 2) A = Assembly Location JA Y = Year Continuous Drain T = 25C I 69 A C D W = Work Week Current R JC T =80C 52 ZZ = Lot Traceabililty C (Note 1) Power Dissipation T = 25C P 30.5 W C D R (Note 1) JC Pulsed Drain T = 25C, t = 10 s I 200 A ORDERING INFORMATION A p DM Current Device Package Shipping Current Limited by Package T = 25C I 80 A A Dmax NTMFS4C06NT1G SO8 FL 1500 / Operating Junction and Storage T , 55 to C J (PbFree) Tape & Reel Temperature T +150 STG Source Current (Body Diode) I 28 A S For information on tape and reel specifications, including part orientation and tape sizes, please Drain to Source DV/DT dV/d 7.0 V/ns t refer to our Tape and Reel Packaging Specifications Single Pulse DraintoSource Avalanche E 68 mJ AS Brochure, BRD8011/D. Energy (T = 25C, V = 10 V, I =37 A , J GS L pk L = 0.1 mH, R = 25 ) (Note 3) GS Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 9 NTMFS4C06N/DNTMFS4C06N 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. Parts are 100% tested at T = 25C, V = 10 V, I = 27 A , EAS = 36 mJ. J GS L pk THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 4.1 JC JunctiontoAmbient Steady State (Note 4) R 49 JA C/W JunctiontoAmbient Steady State (Note 5) 162.3 R JA JunctiontoAmbient (t 10 s) (Note 4) R 19.5 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 12.6 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 14.4 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 3.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 3.2 4.0 DS(on) GS D m V = 4.5 V I = 25 A 4.8 6.0 GS D Forward Transconductance g V = 1.5 V, I = 15 A 58 S FS DS D Gate Resistance R T = 25C 0.3 1.0 2.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1683 ISS Output Capacitance C 841 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 40 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.023 RSS ISS GS DS Total Gate Charge Q 11.6 G(TOT) Threshold Gate Charge Q 2.6 G(TH) nC GatetoSource Charge Q 4.7 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 4.0 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 26 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2