X-On Electronics has gained recognition as a prominent supplier of NTGD3148NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTGD3148NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTGD3148NT1G ON Semiconductor

NTGD3148NT1G electronic component of ON Semiconductor
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Part No.NTGD3148NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET 20V 3A 70MOHM TSOP6
Datasheet: NTGD3148NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2064 ea
Line Total: USD 619.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1751
6000 : USD 0.1681
9000 : USD 0.1681
12000 : USD 0.1681
15000 : USD 0.1681

0
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2874
10 : USD 0.2209
30 : USD 0.2086
100 : USD 0.1964
500 : USD 0.191
1000 : USD 0.1883

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.431
10 : USD 0.6475
100 : USD 0.3207
500 : USD 0.2408
1000 : USD 0.1814
3000 : USD 0.1544

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 3
Multiples : 1
3 : USD 0.4234
25 : USD 0.3189
68 : USD 0.232
185 : USD 0.2198

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2064
9000 : USD 0.1898
24000 : USD 0.1879
45000 : USD 0.1865

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2865

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2075
9000 : USD 0.1919

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the NTGD3148NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTGD3148NT1G and other electronic components in the MOSFETs category and beyond.

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NTGD3148N MOSFET Power, Dual, N-Channel, TSOP-6 20 V, 3.5 A Features NTGD3148N MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 12.5 (BR)DSS J I = 250 A, Ref to 25C mV/C D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 DSS V = 0 V, J GS A V = 16 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 12 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.5 1.5 V GS(TH) GS DS D Gate Threshold Temperature Coefficient V /T 3.28 mV/C GS(TH) J DraintoSource On Resistance R V = 4.5 V I = 3.5 A 41.7 70 DS(on) GS D m V = 2.5 V I = 2.8 A 58 100 GS D Forward Transconductance g V = 5.0 V, I = 3.5 A 6.2 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 300 ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 73 pF OSS V = 10 V DS Reverse Transfer Capacitance C 44 RSS Total Gate Charge Q 3.8 G(TOT) Threshold Gate Charge Q 0.3 G(TH) V = 4.5 V, V = 10 V, GS DS nC I = 3.5 A D GatetoSource Charge Q 0.7 GS GatetoDrain Charge Q 1.1 GD Gate Resistance RG 2.8 SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 7.4 d(ON) Rise Time t 11.2 r V = 4.5 V, V = 10 V, GS DS ns I = 3.5 A, R = 3.0 D G TurnOff Delay Time t 12.8 d(OFF) Fall Time t 1.6 f DRAINTOSOURCE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.71 SD V = 0 V J GS V I = 0.8 A D T = 125C 0.57 J Reverse Recovery Time t 9.0 RR Charge Time T 5.0 ns a V = 0 V, d /d = 100 A/ s, GS IS t I = 0.8 A Discharge Time T S 4.0 b Reverse Recovery Time Q 2.5 nC RR 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTGD3148NT1G TSOP6 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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