X-On Electronics has gained recognition as a prominent supplier of NTGD4167CT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTGD4167CT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTGD4167CT1G ON Semiconductor

Name: NTGD4167CT1G
Brand: ON Semiconductor
SKU: NTGD4167CT1G_ON_Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

NTGD4167CT1G electronic component of ON Semiconductor

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See Product Specifications

Part No.	NTGD4167CT1G
Manufacturer:	ON Semiconductor
Category:	MOSFETs
Description:	MOSFET COMP 30V 2.9A 0.090 TSOP6
Datasheet:	NTGD4167CT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.2378 ea
Line Total: USD 713.4

Availability - 2910
Ship by Thu. 01 May to Wed. 07 May

MOQ: 3000 Multiples: 3000
Pack Size: 3000

NTGD4167CT1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2910

Ship by Thu. 01 May to Wed. 07 May

MOQ : 3000
Multiples : 3000

3000 : USD 0.2378
6000 : USD 0.2366
9000 : USD 0.2355
12000 : USD 0.2343
27000 : USD 0.233
51000 : USD 0.2319
102000 : USD 0.2307

399

Ship by Thu. 08 May to Tue. 13 May

MOQ : 1
Multiples : 1

1 : USD 0.861
10 : USD 0.6954
30 : USD 0.6246
100 : USD 0.3631
500 : USD 0.3209
1000 : USD 0.3045

Specifications

Manufacturer

ON Semiconductor ON Semiconductor

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

2.6 A , 1.9 A 2.6 A , 1.9 A

Vds - Drain-Source Breakdown Voltage

30 V 30 V

Rds On - Drain-Source Resistance

90 mOhms , 300 mOhms 90 mOhms , 300 mOhms

Transistor Polarity

N And P - Channel N And P - Channel

Vgs th - Gate-Source Threshold Voltage

500 mV 500 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1.1 W 1.1 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

TSOP - 6 TSOP - 6

Packaging

Reel Reel

Technology

Si Si

Number of Channels

2 Channel 2 Channel

Vgs - Gate-Source Voltage

4.5 v , - 2.5 V 4.5 v , - 2.5 V

Qg - Gate Charge

3.7 nC , 3.9 nC 3.7 nC , 3.9 nC

Channel Mode

Enhancement Enhancement

Configuration

Dual Dual

Series

Ntgd4167c Ntgd4167c

Brand

On Semiconductor On Semiconductor

Continuous Drain Current

2.2 A 2.2 A

Drain-Source Breakdown Voltage

30 V 30 V

Gate-Source Breakdown Voltage

+/- 12 V +/- 12 V

Power Dissipation

1100 mW 1100 mW

Rds On

90 Mohms At 4.5 V At N Channel, 170 Mohms At 4.5 V At P Channel 90 Mohms At 4.5 V At N Channel, 170 Mohms At 4.5 V At P Channel

Fall Time

4 ns @ n Channel , 8 ns @ p Channel 4 ns @ n Channel , 8 ns @ p Channel

Rise Time

4 ns @ n Channel , 8 ns @ p Channel 4 ns @ n Channel , 8 ns @ p Channel

Factory Pack Quantity :

3000 3000

Typical Turn-Off Delay Time

14 ns @ n Channel , 22 ns @ p Channel 14 ns @ n Channel , 22 ns @ p Channel

Height

0.94 mm 0.94 mm

Length

3 mm 3 mm

Transistor Type

1 N - Channel, 1 P - Channel 1 N - Channel, 1 P - Channel

Width

1.5 mm 1.5 mm

Forward Transconductance - Min

2.6 S, 2.6 S 2.6 S, 2.6 S

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85423999 85423999

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8542399000 8542399000

Typical Turn-On Delay Time

7 ns , 8 ns 7 ns , 8 ns

Category

MOSFET MOSFET

Brand Category

ON Semiconductor ON Semiconductor

Notes:- Show Stocked Products With Similar Attributes.

NTGD4167CT1G Alternative Parts

We are delighted to provide the NTGD4167CT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTGD4167CT1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The NTGD4167CT1G is a MOSFET COMP 30V 2.9A 0.090 TSOP6 device manufactured by ON Semiconductor. It is a four-channel, low RDS(ON) logic-level gate drive MOSFET. It has a maximum junction temperature of 150°C, a maximum gate-to-source voltage of ±20V, and a maximum drain-source breakdown voltage of 30V. It is designed to support various power supply voltages and the ability to provide fast and balanced gate transitions for improved noise and EMI performance. It is suitable for use in a variety of applications, including appliance, automotive, consumer electronics, and industrial solutions.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
2910 Ship by Thu. 01 May to Wed. 07 May MOQ : 3000 Multiples : 3000	3000 : USD 0.2378 6000 : USD 0.2366 9000 : USD 0.2355 12000 : USD 0.2343 27000 : USD 0.233 51000 : USD 0.2319 102000 : USD 0.2307

399 Ship by Thu. 08 May to Tue. 13 May MOQ : 1 Multiples : 1	1 : USD 0.861 10 : USD 0.6954 30 : USD 0.6246 100 : USD 0.3631 500 : USD 0.3209 1000 : USD 0.3045

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