NTGD4161P
Power MOSFET
30 V, 2.3 A, Dual PChannel, TSOP6
Features
Fast Switching Speed
Low Gate Charge
NTGD4161P
ELECTRICAL CHARACTERISTICS (T =25C unless otherwise stated)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V
(BR)DSS GS D
DraintoSource Breakdown Voltage V /T 22 mV/C
(BR)DSS J
Temperature Coefficient
Zero Gate Voltage Drain Current I T = 25C 1.0 A
DSS J
V = 0 V,
GS
V = 24 V
DS
T = 125C 10
J
GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V V = V , I = 250 A 1.0 1.9 3.0 V
GS(TH) GS DS D
Gate Threshold Temperature V /T 4.7 mV/C
GS(TH) J
Coefficient
DraintoSource On Resistance R V = 10 V, I = 2.1 A 105 160
DS(on) m
GS D
V = 4.5 V, I = 1.6 A 190 280
GS D
Forward Transconductance g V = 5.0 V, I = 2.1 A 2.7 S
FS DS D
CHARGES AND CAPACITANCES
Input Capacitance C 281 pF
ISS
V = 15 V, f = 1.0 MHz,
DS
Output Capacitance C 50
OSS
V = 0 V
GS
Reverse Transfer Capacitance C 28
RSS
Total Gate Charge Q 5.6 7.1 nC
G(TOT)
Threshold Gate Charge Q 0.65
G(TH)
V = 10 V, V = 5.0 V,
GS DS
I = 2.1A
D
GatetoSource Charge Q 1.2
GS
GatetoDrain Charge Q 0.90
GD
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time t 7.6 14 ns
d(on)
Rise Time t 9.2 23
r
V = 4.5 V, V = 15 V,
GS DD
I = 1.0 A, R = 6.0
D G
TurnOff Delay Time t 12.5 20
d(off)
Fall Time t 4.5 12
f
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V T = 25C 0.79 1.2 V
SD
J
V = 0 V,
GS
I = 0.8 A
S
T = 125C 0.65
J
Reverse Recovery Time t 8.0
RR
Charge Time t 5.7
ns
a
V = 0 V, dI /dt = 100 A/s,
GS S
I = 0.8 A
S
Discharge Time t 2.3
b
Reverse Recovery Charge Q 3 nC
RR
3. Pulse Test: pulse width 300 s, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.