X-On Electronics has gained recognition as a prominent supplier of NTE2395 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2395 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2395 NTE

NTE2395 electronic component of NTE
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See Product Specifications
Part No.NTE2395
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 60V; 50A; TO220
Datasheet: NTE2395 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.33 ea
Line Total: USD 8.33 
Availability - 2
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 8.33
3 : USD 7.49
4 : USD 5.768
9 : USD 5.46

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2395 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2395 and other electronic components in the MOSFETs category and beyond.

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NTE2395 MOSFET NCh, Enhancement Mode High Speed Switch TO220 Type Package D Features: Dynamic dv/dt Rating +175 C Operating Temperature Fast Switching G Ease of Paralleling Simple Drive Requirements S Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C (Note 1) .......................................................... 50A C T = +100 C ................................................................. 36A C Pulsed Drain Current (Note 2), I .................................................. 200A DM Power Dissipation (T = +25 C), P ................................................ 150W C D Derate Linearly Above 25 C ............................................... 1.0W/ C GatetoSource Voltage, V ...................................................... 20V GS Single Pulse Avalanche Energy (Note 3), E ....................................... 100mJ AS Peak Diode Recovery dv/dt (Note 4), dv/dt .......................................... 4.5V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Current limited by the package, (Die Current = 51A). Note 2. Repetitive rating pulse width limited by maximum junction temperature. Note 3. V = 25V, starting T = +25 C, L = 44 H, R = 25 , I = 51A DD J G AS Note 4. I 51A, di/dt 250A/ s, V V , T +175 C SD DD (BR)DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 60 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.060 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 31A, Note 5 0.028 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 25V, I = 31A, Note 5 15 mhos fs DS D DraintoSource Leakage Current I V = 60V, V = 0V 25 A DSS DS GS V = 48V, V = 0V, T = +125 C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 51A, V = 48V, V = 10V, 67 nC g D DS GS Note 5 GatetoSource Charge Q 18 nC gs GatetoDrain (Miller) Charge Q 25 nC gd TurnOn Delay Time t 14 ns V = 30V, I = 51A, R = 9.1 , d(on) DD D G R = 0.55 , Note 5 D Rise Time t 110 ns r TurnOff Delay Time t 45 ns d(off) Fall Time t 92 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 1900 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 920 pF oss Reverse Transfer Capacitance C 170 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I Note 1 50 A S Pulsed Source Current (Body Diode) I Note 2 200 A SM Diode Forward Voltage V T = +25 C, I = 51A, V = 0V, 2.5 V SD J S GS Note 5 Reverse Recovery Time t 120 180 ns T = +25 C, I = 51A, rr J F di/dt = 100A/ s, Note 5 Reverse Recovery Charge Q 0.53 0.80 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Current limited by the package, (Die Current = 51A). Note 2. Repetitive rating pulse width limited by maximum junction temperature. Note 5. Pulse width 300 s duty cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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