X-On Electronics has gained recognition as a prominent supplier of NTE2403 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2403 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2403 NTE

NTE2403 electronic component of NTE
NTE2403 NTE
NTE2403 Bipolar Transistors - BJT
NTE2403  Semiconductors

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See Product Specifications
Part No. NTE2403
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; RF; 15V; 25mA; 200mW; SOT23
Datasheet: NTE2403 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 8.7277 ea
Line Total: USD 34.91 
Availability - 0
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 4
Multiples : 1
4 : USD 8.7277
25 : USD 3.2729
50 : USD 2.1819
100 : USD 1.959
250 : USD 1.8183
500 : USD 1.701
1000 : USD 1.654

0
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 2.6322
3 : USD 2.2662
8 : USD 1.7347
21 : USD 1.6445

   
Manufacturer
Product Category
Case
Mounting
Kind Of Transistor
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Frequency
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2403 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2403 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2402 (NPN) & NTE2403 (PNP) Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thinfilm cir- cuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These tran- sistors feature low intermodulation distortion and high power gain. Due to very high transition fre- quency, these devices also have excellent wideband properties and low noise up to high frequencies. Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V EBO DC Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA C Total Power Dissipation (T +60C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW A tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W thJA Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 10V, I = 0 50 nA CBO CB E DC Current Gain h V = 10V, I = 14mA 25 50 FE CE C Transition Frequency f V = 10V, I = 14mA, f = 500MHz 5 GHz T CE C Collector Capacitance C V = 10V, I = Ie = 0, f = 1MHz 0.75 pF c CB E Emitter Capacitance C V = 0.5V, I = I = 0, f = 1MHz 0.8 pF e EB C c Feedback Capacitance C V = 10V, I = 2mA, f = 1MHz, 0.4 pF re CE C T = +25C AElectrical Characteristics (Contd): (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Noise Figure (At Optimum F V = 10V, I = 2mA, f = 500MHz, 2.4 dB CE C Source Impedance) T = +25C A Max. Unilateral Power Gain G V = 10V, I = 2mA, f = 500MHz, 18 dB UM CE C (s Assumed to be Zero) T = +25C, Note 2 re A Output Voltage V V = 10V, I = 14mA, R = 75 , 150 mV O CE C L (At d = 60dB) T = +25C, f = 493,25MHz im A (p+qr) 2 2 2 Note 2. G = 10 log s / 1 s 1 s . UM fe ie oe .016 (0.48) C .098 (2.5) Max B E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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