NTE2402 (NPN) & NTE2403 (PNP) Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thinfilm cir- cuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These tran- sistors feature low intermodulation distortion and high power gain. Due to very high transition fre- quency, these devices also have excellent wideband properties and low noise up to high frequencies. Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V EBO DC Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA C Total Power Dissipation (T +60C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW A tot Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W thJA Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 10V, I = 0 50 nA CBO CB E DC Current Gain h V = 10V, I = 14mA 25 50 FE CE C Transition Frequency f V = 10V, I = 14mA, f = 500MHz 5 GHz T CE C Collector Capacitance C V = 10V, I = Ie = 0, f = 1MHz 0.75 pF c CB E Emitter Capacitance C V = 0.5V, I = I = 0, f = 1MHz 0.8 pF e EB C c Feedback Capacitance C V = 10V, I = 2mA, f = 1MHz, 0.4 pF re CE C T = +25C AElectrical Characteristics (Contd): (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Noise Figure (At Optimum F V = 10V, I = 2mA, f = 500MHz, 2.4 dB CE C Source Impedance) T = +25C A Max. Unilateral Power Gain G V = 10V, I = 2mA, f = 500MHz, 18 dB UM CE C (s Assumed to be Zero) T = +25C, Note 2 re A Output Voltage V V = 10V, I = 14mA, R = 75 , 150 mV O CE C L (At d = 60dB) T = +25C, f = 493,25MHz im A (p+qr) 2 2 2 Note 2. G = 10 log s / 1 s 1 s . UM fe ie oe .016 (0.48) C .098 (2.5) Max B E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)