X-On Electronics has gained recognition as a prominent supplier of NTE24 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE24 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE24 NTE

NTE24 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE24
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; TO237
Datasheet: NTE24 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 1.9662 ea
Line Total: USD 19.66 
Availability - 9
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 10
Multiples : 1
10 : USD 1.9662
25 : USD 1.7875
250 : USD 1.425
500 : USD 1.3375
1000 : USD 1.3
2500 : USD 1.25
5000 : USD 1.2175
7500 : USD 1.1987

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE24 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE24 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE24 (NPN) & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector cur- rents to 1A. Features: High CollectorEmitter Breakdown Voltage: V = 80V CEO Exceptional Power Dissipation Capability Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Power Dissipation, P D T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J(max) Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 80 V (BR)CEO C B Collector Cutoff Current I V = 100V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 100 nA EBO EB C DC Current Gain h V = 2V, I = 50mA 40 FE CE C V = 2V, I = 250mA 40 CE C V = 2V, I = 500mA 25 CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage V I = 500mA, I = 50mA 0.5 V CE(sat) C B I = 1000mA, I = 100mA 1.5 V C B BaseEmitter ON Voltage V V = 2V, I = 1000mA 0.5 V BE(on) CE C Current Gain Bandwidth Product f V = 5V, I = 200mA, f = 100MHz 50 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 30 pF ob CB E .200 (5.08) .180 (4.57) .100 (2.54) .180 (4.57) E C B .594 (15.09) .018 (0.46) .015 (0.38) 3.050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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