NTE191 (NPN) & NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for highvoltage video and luminance output stages in TV receivers. Features: High CollectorEmitter Breakdown Voltage: V = 300V (Min) I = 1mA (BR)CEO C Low CollectorEmitter Saturation Voltage: V = 0.75V (Max) I = 30mA CE(sat) C Low CollectorBase Capacitance: C = 3pF (Max) V = 20V cb CB Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CB EmitterBase Voltage, V EBO NTE191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE240 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5C/W thJC Thermal Resistance, JunctiontoAmbient (Note 2), R . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W thJA Note 1. NTE191 is a discontinued device and no longer available. Note 2. R is measured with the device soldered into a typical printed circuit board. thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0, Note 3 300 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 100 A, I = 0 300 V (BR)CBO C E EmitterBase Breakdown Voltage V (BR)EBO NTE191 I = 100 A, I = 0 6 V E C NTE240 5 V Note 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Contd) Collector Cutoff Current I V = 200V, I = 0 0.2 A CBO CB E Emitter Cutoff Current I V = 6V, I = 0 0.1 A EBO BE C ON Characteristics DC Current Gain (NTE191 & NTE240) h I = 1mA, V = 10V, Note 3 25 FE C CE NTE191 I = 10mA, V = 10V, Note 3 40 C CE I = 30mA, V = 10V, Note 3 40 C CE NTE240 I = 10mA, V = 10V, Note 3 30 C CE I = 30mA, V = 10V, Note 3 30 C CE CollectorEmitter Saturation Voltage V I = 30mA, I = 3mA 0.75 V CE(sat) C B BaseEmitter ON Voltage V BE(on) NTE191 I = 30mA, V = 10V 0.85 V C CE NTE240 0.90 V Dynamic Characteristics Current GainBandwidth Product f T NTE191 I = 10mA, V = 20V, 45 MHz C CE f = 100MHz, Note 2 NTE240 60 MHz CollectorBase Capacitance C cb NTE191 V = 20V, I = 0, f = 1MHz 3.0 pF CB E NTE240 8.0 pF Note 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. .380 (9.65) Max .050 (1.27) .160 (4.06) .280 (7.25) Max .100 (2.54) .128 (3.28) Dia .218 (5.55) EB C .995 (25.3) .475 (12.0) Min .100 (2.54) .200 (5.08) Collector Connected to Tab