NTE457 Silicon NChannel JFET Transistor General Purpose Amp, Switch TO92 Type Package Absolute Maximum Ratings: DrainSource Voltage, V .......................................................... 25V DS DrainGate Voltage, V ............................................................ 25V DG Reverse Gate Source Voltage, V ................................................ 25V GSR Gate Current, I .................................................................. 10mA G Total Device Dissipation (T = +25 C), P ......................................... 310mW A D Derate Above 25 C .................................................... 2.82mW/ C Operating Junction Temperature, T ............................................... +125 C J Storage Temperature Range, T .......................................... 65 to +150 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics GateSource Breakdown Voltage V I = 10 A, V = 0 25 V (BR)GS G DS S Gate Reverse Current I V = 15V, V = 0 1 mA GSS GS DS V = 15V, V = 0, T = +100 C 200 mA GS DS A GateSource Cutoff Voltage V V = 15V, I = 10nA 0.5 6.0 V GS(off) DS D GateSource Voltage V V = 15V, I = 100 A 2.5 V GS DS D ON Characteristics ZeroGate Voltage Drain Current I V = 15V, V = 0, Note 1 1 3 5 mA DSS DS GS SmallSignal Characteristics Forward Transfer Admittance y V = 15V, V = 0, f = 1kHz, 1000 5000 mhos fs DS GS Common Source Note 1 Output Admittance Common Source y V = 15V, V = 0, f = 1kHz, 10 50 mhos os DS GS Note 1 Input Capacitance C V = 15V, V = 0, f = 1kHz 4.5 7.0 pF iss DS GS Reverse Transfer Capacitance C V = 15V, V = 0, f = 1kHz 1.5 3.0 pF rss DS GS Note 1. Pulse Test: Pulse Width 630ms, Duty Cycle 10%. Rev. 1013D G S .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D S G .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max