X-On Electronics has gained recognition as a prominent supplier of NTE6401 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE6401 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE6401 NTE

NTE6401 electronic component of NTE
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See Product Specifications
Part No.NTE6401
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: UJT; unipolar; 300mW; TO18
Datasheet: NTE6401 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 9.2625 ea
Line Total: USD 46.31 
Availability - 90
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
90
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 5
Multiples : 1
5 : USD 9.2625
25 : USD 8.0875
100 : USD 7.1125
250 : USD 6.7125
500 : USD 6.525
1000 : USD 6.3375
2500 : USD 6.25
5000 : USD 6.025

   
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Type Of Transistor
Valley Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE6401 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE6401 and other electronic components in the MOSFETs category and beyond.

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NTE6401 Unijunction Transistor Description: The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: Low Peak Point Current: 5 A (Max) Low Emitter Reverse Current: .005 A (Typ) Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Power Dissipation (Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW D RMS Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA E(RMS) Peak Pulse Emitter Current (Note 2), i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A E Emitter Reverse Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V B2E Interbase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V B2B1 Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Note 1 Derate 3mW/C increase in ambient temperature. The total power dissipation (available power to Emitter and BaseTwo) must be limited by the external circuitry. Note 2 Capacitor discharge 10 F or less, 30 volts or less Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Intrinsic Standoff Ratio V = 10V, Note 3 0.56 0.75 B2B1 Interbase Resistance r V = 3V, I = 0 4.7 7.0 9.1 k BB B2B1 E Interbase Resistance Temperature ar 0.1 0.9 %/C BB Coefficient Note 3. Intrinsic standoff ratio, is defined by equation: = V V P F V B2B1 where V = Peak Point Emitter Voltage P V = Interbase Voltage B2B1 V = Emitter to BaseOne Junction Diode Drop ( 0.45V 10 A) FElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Emitter Saturation Voltage V V = 10V, I = 50mA, Note 4 3.5 V EB1(sat) B2B1 E Modulated Interbase Current I V = 10V, I = 50mA 15 mA B2(mod) B2B1 E Emitter Reverse Current I V = 30V, I = 0 0.005 12 A EB20 B2E B1 Peak Point Emitter Current I V = 25V 1 5 A P B2B1 Valley Point Current I V = 20V, R = 100 4 6 mA V B2B1 B2 BaseOne Peak Pulse Voltage V 3 5 V OB1 Note 4. Use pulse techniques: Pulse Width ~ 300 s, duty cycle 2% to avoid internal heating due to interbase modulation which may result in erroneous readings. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Base 1 Emitter 45 Base 2/Case .041 (1.05)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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