NTE6409 Unijunction Transistor Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: Low Peak Point Current: 2 A Max Low Emitter Reverse Current: 200nA Max Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (T = +25C, unless otherwise specified) A Power Dissipation (Note 1), P 300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . D RMS Emitter Current, I 50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E(RMS) Peak Pulse Emitter Current (Note 2), i 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E Emitter Reverse Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V B2E Interbase Voltage, V 35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B2B1 Operating Junction Temperature Range, T 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +125C J Storage Temperature Range, T 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +150C stg Note 1. Derate 3mW/C increase in ambient temperature. The total power dissipation (available power to Emitter and BaseTwo) must be limited by the external circuitry. Note 2. Capacitor discharge: 10 F or less, 30V or lessElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Intrinsic Standoff Ratio V = 10V, Note 3 0.68 0.82 B2B1 Interbase Resistance r V = 3V, I = 0 4.7 7.0 9.1 k BB B2B1 E Interbase Resistance r V = 3V, I = 0, T = 55 to +125C 0.1 0.9 %/C BB B2B1 E A Temperature Coefficient Emitter Saturation Voltage V V = 10V, I = 50mA, Note 4 3.5 V EB1(sat) B2B1 E Modulated Interbase Current I V = 10V, I = 50mA 15 mA B2(mod) B2B1 E Emitter Reverse Current I V = 30V, I = 0 0.005 0.2 A EB2O B2E B1 Peak Point Emitter Current I V = 25V 1 2 A P B2B1 Valley Point Current I V = 20V, R = 100 , Note 4 8 10 18 mA V B2B1 B2 BaseOne Peak Pulse V 6 7 V OB1 Voltage Note 3. Intrinsic Standoff Ratio, , is defined by the equation: V V P F = V B2B1 Where: V = Peak Point Emitter Voltage P V = Interbase Voltage B2B1 V = Emitter to BaseOne Junction Diode Drop ( 0.45V 10 A) F Note 4. Use pulse techniques: PW 300 s, Duty Cycle 2% to avoid internal heating due to inter- base modulation which may result in erroneous readings. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Base 1 Emitter 45 Base 2/Case .041 (1.05)
