NTE6402 Programmable Unijunction Transistor (PUT) Description: The NTE6402 is a 3terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and cathode. This device has been characterized as a Programmable Unijunction Transistor (PUT), offering many advantages over conventional unijunction transistors. The designer can select R and R to program 1 2 unijunction characteristics such as intrinsic standoff ratio, Interbase resistance, peakpoint emitter current, and valleypoint current to meet his particular needs. PUTs are specifically charactrized for long interval timers and other applications requiring low leak- age and low peak point current. PUTs similar types have been characterized Applications: SCR Trigger Pulse and Timing Circuits Oscillators Sensing Circuits Sweep Circits Absolute Maximum Ratings: (T = +25C unless otherwise specified) A GateCathode Forward Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +40V GateCathode Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GateAnode Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +40V AnodeCathode Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V DC Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Peak Anode, Recurrent Forward Current Pulse Width = 100 s, Duty Cycle = 1% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Pulse Width = 20 s, Duty Cycle = 1% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Anode, NonRecurrent Forward Current (10 s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Capacitive Discharge Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 J Total Average Power (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Ambient Temperature Range (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to +100C Note 1. Derate currents and powers 1%/C above 25C. 2 capacitor discharge energy with no current limiting. Note 2. E = 1/2 CVElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Peak Current I V = 10V, R = 1M 2 A P S G V = 10V, R = 10k 5 A S G Offset Voltage V V = 10V, R = 1M 0.2 1.6 V T S G V = 10V, R = 10k 0.2 0.6 V S G Valley Current I V = 10V, R = 1M 50 A V S G V = 10V, R = 10k 70 A S G V = 10V, R = 200 1.5 mA S G Anode GateAnode Leakage Current I V = 40V, T = +25C 10 nA GAO S A V = 40V, T = +75C 100 nA S A GateCathode Leakage Current I V = 40V, AnodeCathode Short 100 nA GKS S Forward Voltage V I = 50mA 1.5 V F F Pulse Output Voltage V 6 V O Pulse Voltage Rate of Rise t 80 ns r .135 (3.45) Min .140 (3.55) Max .210 Seating (5.33) Plane .190 (4.82) Min Max .065 .245 (1.65) .500 (6.23) .021 (.445) (12.7) Max Dia Max Min .500 .018 (0.45) Dia Max A G K (12.7) Min .100 (2.54) .050 (1.27) A G K .100 (2.54) .105 (2.67) Max .165 (4.2) Max .205 (5.2) Max .105 (2.67) Max .200 (5.08) Max TO92 TO98