X-On Electronics has gained recognition as a prominent supplier of NTE221 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE221 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE221 NTE

NTE221 electronic component of NTE
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See Product Specifications
Part No.NTE221
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 20V; 0.018A; TO72
Datasheet: NTE221 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 18.4112 ea
Line Total: USD 18.41 
Availability - 1
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 18.4112
5 : USD 16.7375
25 : USD 13.7875
50 : USD 13.575
100 : USD 12.95
250 : USD 12.2
500 : USD 11.8625
1000 : USD 11.5375

5
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 19.012
2 : USD 13.51
4 : USD 12.768

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE221 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE221 and other electronic components in the MOSFETs category and beyond.

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NTE221 MOSFET Dual Gate, NChannel for VHF TV Receivers Applications TO72 Type Package Description: The NTE221 is an Nchannel depletion type, dualinsulated gate, fieldeffect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RFam- plifier applications. D G2 Features: Extremely Low Feedback Capacitance S, Case G1 High Power Gain Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A DraintoSource Voltage, V .................................................. 0 to +20V DS Gate 1toSource Voltage, V G1S Continuous (DC) ...................................................... +1V to 8V Peak AC ............................................................ +20V to 8V Gate 2toSource Voltage, V G2S Continuous (DC) ................................................ 8V to 40% of V DS Peak AC ............................................................ 8V to +20V DraintoGate Voltage, V or V ................................................ +20V DG1 DG2 Pulsed Drain Current (Note 1), I ................................................... 50mA D Transistor Dissipation (T = +25 C), P ........................................... 400mW A T Derate Linearly Above 25 C ............................................ 2.67mW/ C Operating Ambient Temperature Range, T ................................. 65 to +175 C opr Storage Temperature Range, T .......................................... 65 to +175 C stg Lead Temperature (During Soldering, 1/32 from seating surface, 10sec max), T ........ +265 C L Note 1. Pulse test: Pulse Width 20ms, Duty Cycle 15%. Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate 1toSource Cutoff Voltage V (off) V = 15V, V = 4V, I = 200mA 2 V G1S DS G2S D Gate 2toSource Cutoff Voltage V (off) V = 15V, V = 0, I = 200mA 2 V G2S DS G1S D Gate 1 Leakage Current I V = 20V, V = 0, V = 0 1 nA G1SS G1S G2S DS Gate 2 Leakage Current I V = 20V, V = 0, V = 0 1 nA G2SS G2S G1S DS Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Drain Current I V = 13V, V = 0, V = 4V 18 mA DSS DS G1S G2S Forward Transconductance g V = 13V, I = 10mA, V = 4V, 1000 mhos fs DS D G2S f = 1kHz Performance Characteristics: (T = +25 C, f = 200MHz, Note 2 unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit SmallSignal, Short Circuit Reverse C (DraintoGate 1) at f = 1MHz 0.02 0.03 pF rss Transfer Capacitance Output Capacitance C 2.2 pF oss Input Capacitance C 5.5 pF iss Input Resistance r 1.2 k iss Output Resistance r 2.8 k oss Magnitude of Forward Transconductance Y 11000 mhos fs Phase Angle of Forward Transadmittance 46 deg Maximum Available Power Gain MAG 20 dB Maximum Usable Power Gain MUG Note 3 20 dB u (Unneutralized) Power Gain G 17.5 dB PS Noise Figure NF 5 dB Note 2. V is adjusted for I = 10mA, Gate 2 at AC ground potential, V = 13V, V = 4V. G1S D DS G2S Note 3. Limited by practical design considerations. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate 2 Drain Gate 1 45 Source/Case .040 (1.02)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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