NTE221 MOSFET Dual Gate, NChannel for VHF TV Receivers Applications TO72 Type Package Description: The NTE221 is an Nchannel depletion type, dualinsulated gate, fieldeffect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RFam- plifier applications. D G2 Features: Extremely Low Feedback Capacitance S, Case G1 High Power Gain Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A DraintoSource Voltage, V .................................................. 0 to +20V DS Gate 1toSource Voltage, V G1S Continuous (DC) ...................................................... +1V to 8V Peak AC ............................................................ +20V to 8V Gate 2toSource Voltage, V G2S Continuous (DC) ................................................ 8V to 40% of V DS Peak AC ............................................................ 8V to +20V DraintoGate Voltage, V or V ................................................ +20V DG1 DG2 Pulsed Drain Current (Note 1), I ................................................... 50mA D Transistor Dissipation (T = +25 C), P ........................................... 400mW A T Derate Linearly Above 25 C ............................................ 2.67mW/ C Operating Ambient Temperature Range, T ................................. 65 to +175 C opr Storage Temperature Range, T .......................................... 65 to +175 C stg Lead Temperature (During Soldering, 1/32 from seating surface, 10sec max), T ........ +265 C L Note 1. Pulse test: Pulse Width 20ms, Duty Cycle 15%. Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate 1toSource Cutoff Voltage V (off) V = 15V, V = 4V, I = 200mA 2 V G1S DS G2S D Gate 2toSource Cutoff Voltage V (off) V = 15V, V = 0, I = 200mA 2 V G2S DS G1S D Gate 1 Leakage Current I V = 20V, V = 0, V = 0 1 nA G1SS G1S G2S DS Gate 2 Leakage Current I V = 20V, V = 0, V = 0 1 nA G2SS G2S G1S DS Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Drain Current I V = 13V, V = 0, V = 4V 18 mA DSS DS G1S G2S Forward Transconductance g V = 13V, I = 10mA, V = 4V, 1000 mhos fs DS D G2S f = 1kHz Performance Characteristics: (T = +25 C, f = 200MHz, Note 2 unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit SmallSignal, Short Circuit Reverse C (DraintoGate 1) at f = 1MHz 0.02 0.03 pF rss Transfer Capacitance Output Capacitance C 2.2 pF oss Input Capacitance C 5.5 pF iss Input Resistance r 1.2 k iss Output Resistance r 2.8 k oss Magnitude of Forward Transconductance Y 11000 mhos fs Phase Angle of Forward Transadmittance 46 deg Maximum Available Power Gain MAG 20 dB Maximum Usable Power Gain MUG Note 3 20 dB u (Unneutralized) Power Gain G 17.5 dB PS Noise Figure NF 5 dB Note 2. V is adjusted for I = 10mA, Gate 2 at AC ground potential, V = 13V, V = 4V. G1S D DS G2S Note 3. Limited by practical design considerations. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate 2 Drain Gate 1 45 Source/Case .040 (1.02)