NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: CollectorEmitter Voltage: V = 1500V CEX Glassivated BaseCollector Junction Safe Operating Area 50 s = 20A, 400V Switching Times with Inductive Loads: t = 0.4 s (Typ) I = 4.5A f C Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V CEO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V CEX EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A C Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A B Continuous Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A E Total Power Dissipation, P D T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C T = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W C Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W thJC Maximum Lead Temperature (During Soldering, 1/8 from Case for 5sec), T . . . . . . . . . . . +275C LElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 1) CollectorEmitter Sustaining Voltage V I = 50mA, I = 0 750 V CEO(sus) C B Collector Cutoff Current I V = 1500V, V = 0 1 mA CES CE BE Emitter Cutoff Current I V = 5V, I = 0 1 mA EBO BE C ON Characteristics (Note 1) CollectorEmitter Saturation Voltage V I = 4.5A, I = 1.8A 5 V CE(sat) C B I = 3.5A, I = 1.5A 5 V C B BaseEmitter Saturation Voltage V I = 4.5A, I = 1.8A 1.5 V BE(sat) C B I = 3.5A, I = 1.5A 1.5 V C B Dynamic Characteristics Current Gain Bandwidth Product f I = 100mA, V = 5V, f = 1MHz 4 MHz T C CE test Output Capacitance C V = 10V, I = 0, f = 0.1MHz 125 pF ob CB E Switching Characteristics Fall Time t I = 4.5A, I = 1.8A, L = 8 H 0.4 1.0 s f C B1 B I = 4.5A, I = 1.8A, L = 8 H, 0.6 s C B1 B T = +100C C Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2%. .600 .060 (1.52) (15.24) .173 (4.4) C .156 .550 (3.96) .430 (13.97) Dia. (10.92) BC E .500 (12.7) Min .015 (0.39) .055 (1.4) .216 (5.45) NOTE: Dotted line indicates that case may have square corners