X-On Electronics has gained recognition as a prominent supplier of NTE229 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE229 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE229 NTE

NTE229 electronic component of NTE
NTE229 NTE
NTE229 Bipolar Transistors - BJT
NTE229  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE229
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 30V; 50mA; 425mW; TO92
Datasheet: NTE229 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 2.4887 ea
Line Total: USD 4.98 
Availability - 1
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 2
Multiples : 1
2 : USD 2.4887
25 : USD 2.2625
250 : USD 1.8
500 : USD 1.6875
1000 : USD 1.6125
2500 : USD 1.5625
5000 : USD 1.525
7500 : USD 1.5125

1
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 2.52
3 : USD 2.254
10 : USD 1.75
25 : USD 1.736
27 : USD 1.652

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE229 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE229 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE229 Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 425mW A T Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Lead Temperature (During Soldering, 1/16 1/32 from case, 10sec), T . . . . . . . . . . . . . . . +230C L Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 100 A, I = 0 30 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 100 A, I = 0 3 V (BR)EBO E C Collector Cutoff Current I V = 30V, I = 0 200 nA CBO CB E DC Current Gain h I = 5mA, V = 10V 30 225 FE C CE CollectorEmitter Sustaining Voltage V I = 1mA, I = 0 30 V CEO(sus) C B BaseEmitter ON Voltage V I = 5mA, V = 10V 0.85 V BE(on) C CE Current GainBandwidth Product f I = 5mA, V = 10V, 500 MHz T C CE f = 100MHz Power Gain G V = 12V, V = 2.5V, 28 dB pe CC BB f = 45MHz CollectorBase Capacitance C I = 0, V = 15V, f = 1MHz 0.4 pF cb E CB Noise Figure NF V = 12V, f = 45MHz 6 dB CC.135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min B E C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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