NTE222 Field Effect Transistor Dual Gate NChannel MOSFET TO72 Type Package Absolute Maximum Ratings: DrainSource Voltage, V .......................................................... 25V DS DrainGate Voltage, V ............................................................ 30V DG Drain Current, I ................................................................. 50mA D Reverse Gate Current, I ......................................................... 10mA G Forward Gate Current, I ......................................................... 10mA GF Total Device Dissipation (T = +25 C), P ......................................... 360mW A D Derate Above 25 C ..................................................... 2.4mW/ C Total Device Dissipation (T = +25 C), P .......................................... 1.2mW C D Derate Above 25 C ..................................................... 0.8mW/ C Operating Junction Temperature Range, T .................................. 65 to +175 C J Storage Temperature Range, T .......................................... 65 to +175 C stg Lead Temperature (During Soldering), T ........................................... +300 C L Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V I = 10 A, V = V = 5V 25 V (BR)DSX D G1 G2 Gate 1Source Breakdown Voltage V I = 10mA, Note 1 6 30 V (BR)G1SO G1 Gate 2Source Breakdown Voltage V I = 10mA, Note 1 6 30 V (BR)G2SO G2 Gate 1 Leakage Current I V = 5V, V = V = 0 10 nA G1SS G1S G2S DS Gate 2 Leakage Current I V = 5V, V = V = 0 10 nA G2SS G2S G1S DS Gate 1 to Source Cutoff Voltage V V = 15V, V = 4V, I = 20 A 0.5 4.0 V G1S(off) DS G2S D Gate 2 to Source Cutoff Voltage V V = 15V, V = 0V, I = 20 A 0.2 4.0 V G2S(off) DS G1S D ON Characteristics (Note 2) ZeroGateVoltage Drain Current I V = 15V, V = 4V, V = 0V 6 30 mA DSS DS G2S G1S SmallSignal Characteristics Forward Transfer Admittance Y V = 15V, V = 4V, V = 0V, 10 22 mmhos fs DS G2S G1S f = 1kHz, Note 3 Note 1. All gated breakdown voltages are measured while the device is conducting rated gate cur- rent. This insures that the gate voltage limiting network is functioning properly. Note 2. Pulse Test: Pulse Width = 30 s, Duty Cycle 2%. Note 3. This parameter must be measured with bias voltages applied for less than five (5) seconds to avoid overheating. Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit SmallSignal Characteristics (Contd) Input Capacitance C V = 15V, V = 4V, I = I , 3.3 pF iss DS G2S D DSS f = 1MHz Reverse Transfer Capacitance C V = 15V, V = 4V, I = 10mA, 0.005 0.03 pF rss DS G2S D f = 1MHz Output Capacitance C V = 15V, V = 4V, I = I , 1.4 pF oss DS G2S D DSS f = 1MHz Functional Characteristics Noise Figure NF V = 18V, V = 7V, f = 200MHz 3.5 dB DD GG V = 15V, V = 4V, I = 10mA, 5.0 dB DD G2S D f = 200MHz Common Source Power Gain G V = 18V, V = 7V, f = 200MHz 20 28 dB ps DD GG V = 15V, V = 4V, I = 10mA, 14 dB DD G2S D f = 200MHz Bandwidth BW V = 18V, V = 7V, f = 200MHz 7 12 MHz DD GG V = 18V, f = 245MHz, 4 7 MHz DD LO f = 200MHz, Note 5 RF Gain Control GateSupply Voltage V V = 18V, G = 300dB, 0 2.0 V GG(GC) DD ps f = 200MHz, Note 4 Note 4. G is defined as the change in G from the value at V = 7V. ps ps GG Note 5. Amplitude at input from local oscillator is 3V RMS. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) D Min G2 S, Case G1 .018 (0.45) Dia Gate 2 Drain Gate 1 45 Source/Case .040 (1.02)