X-On Electronics has gained recognition as a prominent supplier of NTE227 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE227 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE227 NTE

NTE227 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE227
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 300V; 100mA; 2W; TO237
Datasheet: NTE227 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 2.65 ea
Line Total: USD 66.25 
Availability - 29
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 25
Multiples : 1
25 : USD 2.65
100 : USD 2.2375
250 : USD 2.1
500 : USD 1.975
1000 : USD 1.8875
2500 : USD 1.825
5000 : USD 1.7875
7500 : USD 1.75

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE227 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE227 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE227 Silicon NPN Transistor High Voltage Amp, Video Output Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA C Power Dissipation (T = +25C), P max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW A D Power Dissipation (T = +25C), P max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W COLLECTOR LEAD D Maximum Operating Junction Temperature, T max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Thermal Resistance, JunctiontoCase (T = +25C), R . . . . . . . . . . . 62.5C/W COLLECTOR LEAD thJC Thermal Resistance, JunctiontoAmbient (T = +25C), R . . . . . . . . . . . . . . . . . . . . . . 147C/W A thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 260V 100 nA CBO CB Emitter Cutoff Current I V = 6V 100 nA EBO EB DC Current Gain h I = 1mA, V = 10V 25 FE C CE I = 10mA, V = 10V 40 90 200 C CE CollectorEmitter Breakdown Voltage V I = 1mA 300 V (BR)CEO C CollectorBase Breakdown Voltage V I = 100 A 300 V (BR)CBO C EmitterBase Breakdown Voltage V I = 10 A 6 V (BR)EBO E CollectorEmitter Saturation Voltage V I = 20mA, I = 2mA 0.25 1.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 20mA, I = 2mA 0.74 1.0 V BE(sat) C B Transition Frequency f I = 10mA 50 200 MHz T C BaseEmitter Saturation Voltage V I = 10mA 0.76 V BE(sat) C Capacitance C 70 pF ib.200 (5.08) .180 (4.57) .100 (2.54) .180 (4.57) E B C .594 (15.09) .018 (0.46) .015 (0.38) 3.050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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