NTE2378 MOSFET NChannel Enhancement Mode, High Speed Switch TO3P Type Package Description: The NTE2378 is an NChannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. D Features: Low ON State Resistance Very High Speed Switching G Converters S Absolute Maximum Ratings: (T = +25 C) A DrainSource Voltage, V ........................................................ 900V DSS GateSource Voltage, V ........................................................ 30V GSS DC Drain Current, I ................................................................. 5A D Pulsed Drain Current (Note 1), I .................................................... 10A DP Allowable Power Dissipation (T = +25 C), P ....................................... 120W C D Maximum Channel Temperature, T ............................................... +150 C ch Storage Temperature Range, T .......................................... 55 to +150 C stg Note 1. Pulse Width 10 s, Duty Cycle 1%. Note 2. Be careful in handling the NTE2378 because it has no protection diode between gate and source. Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V I = 1mA, V = 0 900 V (BR)DSS D GS ZeroGate Voltage Drain Current I V = 0, V = 900V 1.0 mA DSS GS DS GateSource Leakage Current I V = 0, V = 30V 100 nA GSS DS GS Cutoff Voltage V V = 10V, I = 1mA 2 3 V GS(off) DS D Static Drain Source On Resistance R V = 10V, I = 2A 2.8 3.6 DS(on) GS D Forward Transconductance g V = 20V, I = 2A 1.0 2.0 mho fs DS D Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input Capactiance C 700 pf iss Output Capacitance C 300 pf V = 20V, f = 1MHz oss DS Reverse Transfer Capactiance C 170 pf rss TurnOn Time t 15 ns d(on) Rise Time t 35 ns r V = 200V, I = 2A, DD D V = 10V, R = 50 TurnOff Delay Time t GS GS 200 ns d(off) Fall Time t 65 ns f Diode Forward Voltage V I = 5A, V = 0 1.8 V SD S GS .190 (4.82) .615 (15.62) D .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) GD S .215 (5.47)