NTE2900 MOSFET NCh, Enhancement Mode High Speed Switch TO220 Type Package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching G Ease of Paralleling Simple Drive Requirements S Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 14A C T = +100 C ................................................................ 8.5A C Pulsed Drain Current (Note 1), I ................................................... 56A DM Power Dissipation (T = +25 C), P ................................................ 125W C D Derate Linearly Above 25 C ............................................... 1.0W/ C GatetoSource Voltage, V ....................................................... 20 GS Single Pulse Avalanche Energy (Note 2), E ....................................... 550mJ AS Avalanche Current (Note 1), I ...................................................... 14A AR Repetitive Avalanche Energy (Note 1), E .......................................... 13mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 4.8V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 25V, starting T = +25 C, L = 4.5mH, R = 25 , I = 14A DD J G AS Note 3. I 14A, di/dt 150A/ s, V 250V, T +175 C SD DD J Note 4. Pules Width 300 s, Duty Cycle 2%. Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 250 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.34 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 8.4A, Note 4 0.28 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 50V, I = 8.4A, Note4 6.7 mhos fs DS D DraintoSource Leakage Current I V = 250V, V = 0V 25 A DSS DS GS V = 200V, V = 0V, T = +125 C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 7.9A, V = 200V, V = 10V, 68 nC g D DS GS Note 4 GatetoSource Charge Q 11 nC gs GatetoDrain (Miller) Charge Q 35 nC gd TurnOn Delay Time t 11 ns V = 125V, I = 7.9A, R = 9.1 , d(on) DD D G R = 8.7 , Note 4 D Rise Time t 24 ns r TurnOff Delay Time t 53 ns d(off) Fall Time t 49 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 1300 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 330 pF oss Reverse Transfer Capacitance C 85 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 14 A S Pulsed Source Current (Body Diode) I Note 1 56 A SM Diode Forward Voltage V T = +25 C, I = 14A, V = 0V, 1.8 V SD J S GS Note 4 Reverse Recovery Time t 250 500 ns T = +25 C, I = 7.9A, rr J F di/dt = 100A/ s, Note 4 Reverse Recovery Charge Q 2.3 4.6 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 4. Pulse width 300 s duty cycle 2%.