X-On Electronics has gained recognition as a prominent supplier of NTE2900 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2900 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2900 NTE

NTE2900 electronic component of NTE
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See Product Specifications
Part No.NTE2900
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 250V; 14A; TO220
Datasheet: NTE2900 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 3.5634 ea
Line Total: USD 71.27 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 20
Multiples : 1
20 : USD 3.5634
50 : USD 2.1394
100 : USD 1.9277
200 : USD 1.794
500 : USD 1.6714

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 3.766
3 : USD 3.388
7 : USD 2.464
18 : USD 2.324

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2900 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2900 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
Stock Image NTE290A
Bipolar (BJT) Single Transistor - PNP -80 V - 120 MHz - 600 mW - 200 ...
Stock : 3
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE291
Transistor: NPN; bipolar; 120V; 4A; 40W; TO220
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2902
Transistor: N-JFET; 25V; 0.06A; TO92
Stock : 6
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2903
Transistor: N-MOSFET; 500V; 5A; TO220FN
Stock : 12
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2904
Transistor: N-MOSFET; 55V; 64A; TO220
Stock : 3
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2905
Transistor: P-MOSFET; 200V; 12A; TO247
Stock : 30
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2906
Transistor: N-MOSFET; 200V; 8A; TO3
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2909
Transistor: N-MOSFET; 100V; 57A; TO220
Stock : 26
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2908
Transistor: N-MOSFET; 40V; 162A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2907
Transistor: N-MOSFET; 600V; 10A; TO220FP
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image NTE2902
Transistor: N-JFET; 25V; 0.06A; TO92
Stock : 6
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2903
Transistor: N-MOSFET; 500V; 5A; TO220FN
Stock : 12
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2904
Transistor: N-MOSFET; 55V; 64A; TO220
Stock : 3
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2905
Transistor: P-MOSFET; 200V; 12A; TO247
Stock : 30
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2906
Transistor: N-MOSFET; 200V; 8A; TO3
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2920
Transistor: N-MOSFET; 60V; 70A; TO247
Stock : 6
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2921
Transistor: N-MOSFET; 250V; 15A; TO247
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2922
Transistor: N-MOSFET; 400V; 16A; TO3P
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2923
Transistor: N-MOSFET; 500V; 8.8A; TO247
Stock : 2
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2924
Transistor: N-MOSFET; 600V; 6.8A; TO247
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NTE2900 MOSFET NCh, Enhancement Mode High Speed Switch TO220 Type Package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching G Ease of Paralleling Simple Drive Requirements S Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 14A C T = +100 C ................................................................ 8.5A C Pulsed Drain Current (Note 1), I ................................................... 56A DM Power Dissipation (T = +25 C), P ................................................ 125W C D Derate Linearly Above 25 C ............................................... 1.0W/ C GatetoSource Voltage, V ....................................................... 20 GS Single Pulse Avalanche Energy (Note 2), E ....................................... 550mJ AS Avalanche Current (Note 1), I ...................................................... 14A AR Repetitive Avalanche Energy (Note 1), E .......................................... 13mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 4.8V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 25V, starting T = +25 C, L = 4.5mH, R = 25 , I = 14A DD J G AS Note 3. I 14A, di/dt 150A/ s, V 250V, T +175 C SD DD J Note 4. Pules Width 300 s, Duty Cycle 2%. Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 250 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.34 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 8.4A, Note 4 0.28 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 50V, I = 8.4A, Note4 6.7 mhos fs DS D DraintoSource Leakage Current I V = 250V, V = 0V 25 A DSS DS GS V = 200V, V = 0V, T = +125 C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 7.9A, V = 200V, V = 10V, 68 nC g D DS GS Note 4 GatetoSource Charge Q 11 nC gs GatetoDrain (Miller) Charge Q 35 nC gd TurnOn Delay Time t 11 ns V = 125V, I = 7.9A, R = 9.1 , d(on) DD D G R = 8.7 , Note 4 D Rise Time t 24 ns r TurnOff Delay Time t 53 ns d(off) Fall Time t 49 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 1300 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 330 pF oss Reverse Transfer Capacitance C 85 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 14 A S Pulsed Source Current (Body Diode) I Note 1 56 A SM Diode Forward Voltage V T = +25 C, I = 14A, V = 0V, 1.8 V SD J S GS Note 4 Reverse Recovery Time t 250 500 ns T = +25 C, I = 7.9A, rr J F di/dt = 100A/ s, Note 4 Reverse Recovery Charge Q 2.3 4.6 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 4. Pulse width 300 s duty cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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