X-On Electronics has gained recognition as a prominent supplier of NTE2906 MOSFET across the USA, India, Europe, Australia, and various other global locations. NTE2906 MOSFET are a product manufactured by NTE. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

NTE2906 NTE

NTE2906 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE2906
Manufacturer: NTE
Category: MOSFET
Description: Transistor: N-MOSFET; 200V; 8A; TO3
Datasheet: NTE2906 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 53.73 ea
Line Total: USD 107.46

Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 08 Aug to Wed. 14 Aug
MOQ : 2
Multiples : 1
2 : USD 53.73
10 : USD 27.756
25 : USD 25.9092
50 : USD 25.2288
100 : USD 24.2892

0
Ship by Thu. 08 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 38.0481
2 : USD 35.9721

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2906 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2906 and other electronic components in the MOSFET category and beyond.

Image Part-Description
Stock Image NTE290A
Bipolar (BJT) Single Transistor - PNP -80 V - 120 MHz - 600 mW - 200 ...
Stock : 39
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE291
Transistor: NPN; bipolar; 120V; 4A; 40W; TO220
Stock : 60
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2909
Transistor: N-MOSFET; 100V; 57A; TO220
Stock : 26
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2908
Transistor: N-MOSFET; 40V; 162A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2910
Transistor: N-JFET; 40V; TO18
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2907
Transistor: N-MOSFET; 600V; 10A; TO220FP
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2912
Transistor: N-MOSFET; 75V; 82A; TO220AB
Stock : 18
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2913
Transistor: N-MOSFET; 55V; 110A; TO247
Stock : 13
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2914
Transistor: N-MOSFET; 60V; 25A; TO220F
Stock : 13
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2911
Transistor: N-MOSFET; 500V; 12A; TO220F
Stock : 20
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image NTE2920
Transistor: N-MOSFET; 60V; 70A; TO247
Stock : 1
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2921
Transistor: N-MOSFET; 250V; 15A; TO247
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2922
Transistor: N-MOSFET; 400V; 16A; TO3P
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2923
Transistor: N-MOSFET; 500V; 8.8A; TO247
Stock : 2
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2924
Transistor: N-MOSFET; 600V; 6.8A; TO247
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2930
Transistor: N-MOSFET; 100V; 31A; TO3PML
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2931
Transistor: N-MOSFET; 200V; 12.8A; TO3PML
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2932
Transistor: N-MOSFET; 200V; 21.3A; TO3PML
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2933
Transistor: N-MOSFET; 400V; 8A; TO3PML
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2934
Transistor: N-MOSFET; 400V; 11.5A; TO3PML
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NTE2906 MOSFET NChannel, Enhancement Mode High Speed Switch (Compl to NTE2998) TO3 Type Package D Features: High Speed Switching High Voltage High Energy Rating G Enhancement Mode Integral Protection Diode S Absolute Maximum Ratings: (T = +25 C unless otherwise specified) C DrainSource Voltage, V ........................................................ 200V DSX GateSource Voltage, V ........................................................ 14V GSS Continuous Drain Current, I ......................................................... 8A D Body Drain Diode, I ............................................................. 8A D(PK) Total Power Dissipation (T = +25 C), P ........................................... 125W C D Maximum Operating Junction Temperature, T ...................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics DrainSource Breakdown Voltage BV V = 10V, I = 10mA 200 V DSX GS D GateSource Breakdown Voltage BV V = 0, I = 100 A 14 V GSS DS G GateSource CutOff Voltage V V = 10V, I = 100mA 0.15 1.5 V GS(OFF) DS D DrainSource Saturation Voltage V V = 0, I = 8A, Note 1 12 V DS(SAT) GD D DrainSource CutOff Current I V = 10V, V = 200V 10 mA DSX GS DS Forward Transfer Admittance y V = 10V, I = 3A, Note 1 0.7 2.0 S fs DS D Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Input Capacitance C V = 10V, f = 1MHz 500 pF iss DS Output Capacitance C 300 pF oss Reverse Transfer Capacitance C 10 pF rss TurnOn Time t V = 20V, I = 5A 100 ns on DS D TurnOff Time t 50 ns off .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Drain 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Gate Source/Case

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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