NTE2904 NTE

NTE2904 MOSFET NCh, Enhancement Mode High Speed Switch TO220 Type Package D Features: Advanced Process Technology Ultra Low On Resistance Dynamic dv/dt Rating +175 C Operating Temperature G Fast Switching S Fully Avalanche Rated Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 64A C T = +100 C ................................................................. 45A C Pulsed Drain Current (Note 1), I .................................................. 210A DM Power Dissipation (T = +25 C), P ............................................... 7130W C D Derate Linearly Above 25 C .............................................. 0.83W/ C GatetoSource Voltage, V ...................................................... 20V GS Avalanche Current (Note 1), I ...................................................... 32A AR Repetitive Avalanche Energy (Note 1), E .......................................... 13mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 5.0V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 1.15 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. Starting T = +25 C, L = 0.37mH, R = 25 , I = 32A J G AS Note 3. I 32A, di/dt 220A/ s, V V , T +175 C SD DD (BR)DSS J Rev. 714Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 55 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.058 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 32A, Note 4 0.014 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 25V, I = 32A, Note 4 24 mhos fs DS D DraintoSource Leakage Current I V = 55V, V = 0V 25 A DSS DS GS V = 44V, V = 0V, T = +150 C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 32A, V = 44V, V = 10V 81 nC g D DS GS GatetoSource Charge Q 19 nC gs GatetoDrain (Miller) Charge Q 30 nC gd TurnOn Delay Time t 12 ns V = 28V, I = 32A, R = 0.85 , d(on) DD D G R = 79 , Note 4 D Rise Time t 78 ns r TurnOff Delay Time t 34 ns d(off) Fall Time t 50 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 1970 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 470 pF oss Reverse Transfer Capacitance C 120 pF rss Single Pulse Avalanche Energy E I = 32A, L = 0.37mH, Note 2 700 190 mJ AS AS Note 5 Note 6 SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 64 A S Pulsed Source Current (Body Diode) I Note 1 210 A SM Diode Forward Voltage V T = +25 C, I = 32A, V = 0V, 1.3 V SD J S GS Note 4 Reverse Recovery Time t T = +25 C, I = 32A, 68 100 ns rr J F di/dt = 100A/ s, Note 4 Reverse Recovery Charge Q 220 330 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 4. Pulse width 400 s duty cycle 2%. Note 5. This is the destructive value not limited to the thermal limit. Note 6. This is the thermal limited value.