X-On Electronics has gained recognition as a prominent supplier of NTE2904 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2904 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2904 NTE

NTE2904 electronic component of NTE
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See Product Specifications
Part No.NTE2904
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 55V; 64A; TO220
Datasheet: NTE2904 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 3.2725 ea
Line Total: USD 9.82 
Availability - 2
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3
Multiples : 1
3 : USD 3.2725
10 : USD 2.975
100 : USD 2.375
250 : USD 2.3
500 : USD 2.225
1000 : USD 2.1125
2500 : USD 2.05
5000 : USD 2.025

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2904 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2904 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
Stock Image NTE290A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2906
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2909
Transistor: N-MOSFET; 100V; 57A; TO220
Stock : 26
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2908
Transistor: N-MOSFET; 40V; 162A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2910
Transistor: N-JFET; 40V; TO18
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2907
Transistor: N-MOSFET; 600V; 10A; TO220FP
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2912
Transistor: N-MOSFET; 75V; 82A; TO220AB
Stock : 18
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2911
Transistor: N-MOSFET; 500V; 12A; TO220F
Stock : 20
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image NTE2905
Transistor: P-MOSFET; 200V; 12A; TO247
Stock : 30
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2906
Transistor: N-MOSFET; 200V; 8A; TO3
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2920
Transistor: N-MOSFET; 60V; 70A; TO247
Stock : 6
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2921
Transistor: N-MOSFET; 250V; 15A; TO247
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2922
Transistor: N-MOSFET; 400V; 16A; TO3P
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2923
Transistor: N-MOSFET; 500V; 8.8A; TO247
Stock : 2
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2924
Transistor: N-MOSFET; 600V; 6.8A; TO247
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2930
Transistor: N-MOSFET; 100V; 31A; TO3PML
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2931
Transistor: N-MOSFET; 200V; 12.8A; TO3PML
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2932
Transistor: N-MOSFET; 200V; 21.3A; TO3PML
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NTE2904 MOSFET NCh, Enhancement Mode High Speed Switch TO220 Type Package D Features: Advanced Process Technology Ultra Low On Resistance Dynamic dv/dt Rating +175 C Operating Temperature G Fast Switching S Fully Avalanche Rated Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 64A C T = +100 C ................................................................. 45A C Pulsed Drain Current (Note 1), I .................................................. 210A DM Power Dissipation (T = +25 C), P ............................................... 7130W C D Derate Linearly Above 25 C .............................................. 0.83W/ C GatetoSource Voltage, V ...................................................... 20V GS Avalanche Current (Note 1), I ...................................................... 32A AR Repetitive Avalanche Energy (Note 1), E .......................................... 13mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 5.0V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 1.15 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. Starting T = +25 C, L = 0.37mH, R = 25 , I = 32A J G AS Note 3. I 32A, di/dt 220A/ s, V V , T +175 C SD DD (BR)DSS J Rev. 714Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 55 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.058 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 32A, Note 4 0.014 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 25V, I = 32A, Note 4 24 mhos fs DS D DraintoSource Leakage Current I V = 55V, V = 0V 25 A DSS DS GS V = 44V, V = 0V, T = +150 C 250 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 32A, V = 44V, V = 10V 81 nC g D DS GS GatetoSource Charge Q 19 nC gs GatetoDrain (Miller) Charge Q 30 nC gd TurnOn Delay Time t 12 ns V = 28V, I = 32A, R = 0.85 , d(on) DD D G R = 79 , Note 4 D Rise Time t 78 ns r TurnOff Delay Time t 34 ns d(off) Fall Time t 50 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 1970 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 470 pF oss Reverse Transfer Capacitance C 120 pF rss Single Pulse Avalanche Energy E I = 32A, L = 0.37mH, Note 2 700 190 mJ AS AS Note 5 Note 6 SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 64 A S Pulsed Source Current (Body Diode) I Note 1 210 A SM Diode Forward Voltage V T = +25 C, I = 32A, V = 0V, 1.3 V SD J S GS Note 4 Reverse Recovery Time t T = +25 C, I = 32A, 68 100 ns rr J F di/dt = 100A/ s, Note 4 Reverse Recovery Charge Q 220 330 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 4. Pulse width 400 s duty cycle 2%. Note 5. This is the destructive value not limited to the thermal limit. Note 6. This is the thermal limited value.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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