X-On Electronics has gained recognition as a prominent supplier of NTE2382 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2382 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2382 NTE

NTE2382 electronic component of NTE
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Part No.NTE2382
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 100V; 8A; TO220
Datasheet: NTE2382 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 4.283 ea
Line Total: USD 85.66 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 20
Multiples : 1
20 : USD 4.283
50 : USD 2.7857
100 : USD 2.5629
200 : USD 2.3623
500 : USD 2.2063

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 4.942
3 : USD 4.452
5 : USD 3.234
14 : USD 3.052

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2382 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2382 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
Stock Image NTE2385
Transistor: N-MOSFET; 500V; 8A; TO220
Stock : 10
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2389
Transistor: N-MOSFET; 60V; 38A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2383
Transistor: P-MOSFET; 100V; 8A; TO220
Stock : 23
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2387
Transistor: N-MOSFET; 800V; 4A; TO220
Stock : 12
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2388
Transistor: N-MOSFET; 200V; 18A; TO220
Stock : 49
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2390
Transistor: N-MOSFET; 60V; 12A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE239
SCS; Ic:175mA; TO72
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2384
Transistor: N-MOSFET; 900V; 6A; TO3
Stock : 4
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2386
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) TO-3
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2391
Transistor: P-MOSFET; 100V; 40A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image NTE2383
Transistor: P-MOSFET; 100V; 8A; TO220
Stock : 23
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2387
Transistor: N-MOSFET; 800V; 4A; TO220
Stock : 12
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2388
Transistor: N-MOSFET; 200V; 18A; TO220
Stock : 49
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2390
Transistor: N-MOSFET; 60V; 12A; TO220
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2393
Transistor: N-MOSFET; 500V; 9A; TO3P
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2397
Transistor: N-MOSFET; 400V; 10A; TO220
Stock : 12
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2987
Transistor: N-MOSFET; 100V; 20A; TO220
Stock : 4
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE4153NT1G
MOSFET 20V 915mA N-Channel
Stock : 36000
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE458
Transistor: N-JFET; unipolar; 50V; 20mA; 250mW; TO92; Igt:10mA
Stock : 2
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE6400
Transistor: UJT; unipolar; 450mW; TO39
Stock : 10
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NTE2382 MOSFET NChannel Enhancement Mode, High Speed Switch (Compl to NTE2383) Description: The NTE2382 is a MOS power NChannel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. D Features: Lower R DS(ON) Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell Structure G Lower Input Capacitance Extended Safe Operating Area S Improved High Temperature Reliability Absolute Maximim Ratings: DrainSource Voltage (Note 1), V ................................................ 100V DSS DrainGate Voltage (R = 1M , Note 1), V ...................................... 100V GS DGR GateSource Voltage, V ......................................................... 20V GS Continuous Drain Current, I D T = +25 C ................................................................. 9.2A C T = +100 C ................................................................ 6.5A C Drain Current, Pulsed (Note 3), I ................................................... 37A DM Gate Current, Pulsed, I ......................................................... 1.5A GM Single Pulsed Avalanvhe Energy (Note 4), E ....................................... 36mJ AS Avalanche Current, I ............................................................. 9.2A AS Total Power Dissipation (T = +25 C), P ............................................ 50W C D Derate Above 25 C ....................................................... 0.4W/ C Operating Junction Temperature Range, T ................................. 55 to +150 C opr Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toAmbient, R .................................. 62.5 C/W thJA Thermal Resistance, Junction toCase, R ..................................... 2.5 C/W thJC Thermal Resistance, Case toSink (Note 5), R ................................. 0.5 C/W thCS Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T .............. +300 C L Note 1. T = +25 to +150 C J Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 3. Repetitive rating: Pulse width limited by max. junction temperature. Rev. 1013Note 4. L = 64mH, V = 25V, R = 25 , Starting T = +25 C. DD G J Note 5. Mounting surface flat, smooth, and greased. Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V V = 0, I = 0.25mA 100 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 100V, V = 0 0.25 mA DSS DS GS V = 80V, V = 0, T = +125 C 1.0 mA DS GS J GateBody Leakage Current, Forward I V = 20V 100 nA GSS GS GateBody Leakage Current, Reverse I V = 20V 100 nA GSS GS Gate Threshold Voltage V V = V , I = 0.25mA 2.0 4.0 V GS(th) DS GS D Static DrainSource OnResistance r V = 10V, I = 4.6A, Note 2 0.27 DS(on) GS D Forward Transconductance g V 50V, I = 4.6A, Note 2 2.7 4.1 mhos FS DS D Input Capacitance C V = 25V, V = 0, f = 1MHz 400 pF iss DS GS Output Capacitance C 130 pF oss Reverse Transfer Capacitance C 40 pF rss TurnOn Delay Time t V = 50V, I = 9.2A, Z = 18 , 8.8 13.0 ns d(on) DD D O MOSFET switching times are Rise Time t 30 45 ns r essentially independent of operating temperature TurnOff Delay Time t 19 27 ns d(off) Fall Time t 20 30 ns f Total Gate Charge Q 23 nC V = 10V, V = 80V, I = 9.2A, g GS DS D Gate charge is essentially GateSource Charge Q 4.6 nC gs independent of operating temperature GateDrain (Miller) Charge Q 9.1 ns gd SourceDrain Diode Ratings and Characteristics Continuous Source Current I 9.2 A S (Body Diode) Pulse Source Current (Body Diode) I Note 3 37 A SM Diode Forward Voltage V T = +25 C, I = 9.2A, V = 0V, 2.5 V SD J S GS Note 2 Reverse Recovery Time t T = +25 C, I = 9.2A, 110 240 ns rr J F dI /dt = 100A/ s F Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 3. Repetitive rating: Pulse width limited by max. junction temperature.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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