NTE2387 MOSFET NChannel Enhancement Mode, High Speed Switch TO220 Type Package Absolute Maximum Ratings: DrainSource Voltage, V ......................................................... 800V DS DrainGate Voltage (R = 20k ), V ............................................. 800V GS DGR GateSource Voltage, V ......................................................... 30V GS ........................................................... 16A Pulsed Drain Current, I DM Continuous Drain Current, I D T = +25 C ................................................................. 4.0A C T = +100 C ................................................................ 2.5A C Total Dissipation (T = +25 C), P ................................................. 125W C tot Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Thermal Resistance, Junction toCase, R ............................ 1.0 C/W thJC Typical Thermal Resistance, Junction toAmbient, R ............................ 60 C/W thJA Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics DrainSource Breakdown Voltage V I = 250 A, V = 0 800 V (BR)DSS D GS ZeroGate Voltage Drain Current I V = 0, V = 800V, T = +25 C 2 20 A DSS GS DS C V = 0, V = 800V, T = +125 C 0.1 1.0 mA GS DS C GateBody Leakage Current I V = 0, V = 30V 10 100 nA GSS DS GS Gate Threshold Voltage V V = V , I = 1mA 2.1 3.0 4.0 V GS(th) DS GS D Static DrainSource On Resistance R V = 10V, I = 1.5A 2.7 3.0 DS(on) GS D Dynamic Characteristics Forward Transconductance g V = 25V, I = 1.5A 3.0 4.3 mho fs DS D Input Capacitance C 1000 1250 pf V = 25V, V = 0, f = 1MHz iss DS GS Output Capacitance C 80 120 pf oss Reverse Transfer Capacitance C 30 50 pf rss TurnOn Time t 10 25 ns V = 30V, I = 2.3A, V = 10V, d(on) DD D GS R = 50 , R = 50 GS gen Rise Time t 25 40 ns r TurnOff Delay Time t 130 150 ns d(off) Fall Time t 40 60 ns f Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics (Contd) Internal Drain Inductance L Measured from contact screw on tab 3.5 nH D to center of die Measured from drain lead 6mm from 4.5 nH package to center of die Internal Source Inductance L Measured from the source lead 7.5 nH S 6mm from package to source bonding pad SourceDrain Diode Ratings and Characteristics Continuous Reverse Drain Current I 4 A DR Pulsed Reverse Drain Current I 16 A DRM Diode Forward Voltage V I = 4A, V = 0 1.0 1.3 V SD F GS Reverse Recovery Time t I = 4A, di /dt = 100A/ s, V = 0, 1800 ns rr F F GS V = 100V R Reverse Recovered Charge Q 12 C rr D .420 (10.67) Max .110 (2.79) G .500 S .147 (3.75) Dia (12.7) Max Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate Source .100 (2.54) Drain/Tab